Invention Application
- Patent Title: SEMICONDUCTOR MEMORY DEVICE FOR SUPPRESSING VARIATIONS OF IMPURITY CONCENTRATIONS
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Application No.: US17559786Application Date: 2021-12-22
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Publication No.: US20220115403A1Publication Date: 2022-04-14
- Inventor: Takayuki MARUYAMA , Yoshiaki FUKUZUMI , Yuki SUGIURA , Shinya ARAI , Fumie KIKUSHIMA , Keisuke SUDA , Takashi ISHIDA
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2018-093926 20180515
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11519 ; H01L27/11556 ; H01L27/11565 ; H01L21/768
Abstract:
A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.
Information query
IPC分类:
