公开(公告)号：US20220115403A1

公开(公告)日：2022-04-14

申请号：US17559786

申请日：2021-12-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takayuki MARUYAMA ,  Yoshiaki FUKUZUMI ,  Yuki SUGIURA ,  Shinya ARAI ,  Fumie KIKUSHIMA ,  Keisuke SUDA ,  Takashi ISHIDA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L21/768

Abstract: A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.

公开(公告)号：US20190355742A1

公开(公告)日：2019-11-21

申请号：US16296276

申请日：2019-03-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takayuki MARUYAMA ,  Yoshiaki Fukuzumi ,  Yuki Sugiura ,  Shinya Arai ,  Fumie Kikushima ,  Keisuke Suda ,  Takashi Ishida

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L21/768

Abstract: A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.