Invention Application
- Patent Title: DEVICE COMPRISING A TRANSISTOR
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Application No.: US17584593Application Date: 2022-01-26
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Publication No.: US20220149151A1Publication Date: 2022-05-12
- Inventor: Alexis GAUTHIER , Pascal CHEVALIER , Gregory AVENIER
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Priority: FR1909282 20190819
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/732
Abstract:
A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.
Public/Granted literature
- US11804521B2 Device comprising a transistor Public/Granted day:2023-10-31
Information query
IPC分类:
