公开(公告)号：US20210057521A1

公开(公告)日：2021-02-25

申请号：US16995079

申请日：2020-08-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/8222 ,  H01L29/732

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US20220254686A1

公开(公告)日：2022-08-11

申请号：US17728088

申请日：2022-04-25

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gregory AVENIER ,  Alexis GAUTHIER ,  Pascal CHEVALIER

IPC: H01L21/8222 ,  H01L27/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93 ,  H01L21/3105 ,  H01L21/8249

Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.

公开(公告)号：US20220149151A1

公开(公告)日：2022-05-12

申请号：US17584593

申请日：2022-01-26

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/732

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

公开(公告)号：US20220130728A1

公开(公告)日：2022-04-28

申请号：US17568500

申请日：2022-01-04

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pascal CHEVALIER ,  Alexis GAUTHIER ,  Gregory AVENIER

IPC: H01L21/8222 ,  H01L21/265 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93

Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.

公开(公告)号：US20240162328A1

公开(公告)日：2024-05-16

申请号：US18387627

申请日：2023-11-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Edoardo BREZZA ,  Nicolas GUITARD ,  Gregory AVENIER

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/66234 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004

Abstract: A bipolar transistor is manufactured by: forming a collector region; forming a first layer made of a material of a base region and an insulating second layer; forming a cavity reaching the collector region; forming a portion of the collector region and a portion of the base region in the cavity; forming an insulating fourth layer made of a same material as the insulating second layer in the periphery of the bottom of the cavity, the insulating fourth layer having a same thickness as the insulating second layer; forming an emitter region; and simultaneously removing the insulating second and a portion of the insulating fourth layer not covered by the emitter region.

公开(公告)号：US20220254879A1

公开(公告)日：2022-08-11

申请号：US17734486

申请日：2022-05-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L29/732

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US20210057520A1

公开(公告)日：2021-02-25

申请号：US16995054

申请日：2020-08-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/732

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

公开(公告)号：US20190148531A1

公开(公告)日：2019-05-16

申请号：US16250182

申请日：2019-01-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC: H01L29/732 ,  H01L21/3105 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7322 ,  H01L21/31056 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/737

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.