METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS

Invention Application

US20220208556A1 METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS 有权

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Patent Title: METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS
Application No.: US17355955

Application Date: 2021-06-23
Publication No.: US20220208556A1

Publication Date: 2022-06-30
Inventor: Roshan Jayakhar TIRUKKONDA , Senaka KANAKAMEDALA , Rahul SHARANGPANI , Raghuveer S. MAKALA , Monica TITUS
Applicant: SANDISK TECHNOLOGIES LLC
Applicant Address: US TX Addison
Assignee: SANDISK TECHNOLOGIES LLC
Current Assignee: SANDISK TECHNOLOGIES LLC
Current Assignee Address: US TX Addison
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L23/535 ; H01L27/11556 ; H01L27/11529 ; H01L27/11582 ; H01L27/11573 ; H01L27/11597 ; H01L27/11592 ; H01L21/768

METHOD OF MAKING A THREE-DIMENSIONAL MEMORY DEVICE USING COMPOSITE HARD MASKS FOR FORMATION OF DEEP VIA OPENINGS

Abstract:

An alternating stack of first material layers and second material layers can be formed over a semiconductor material layer. A patterning film is formed over the alternating stack, and openings are formed through the patterning film. Via openings are formed through the alternating stack at least to a top surface of the semiconductor material layer by performing a first anisotropic etch process that transfers a pattern of the openings in the patterning film. A cladding liner can be formed on a top surface of the patterning film and sidewalls of the openings in the pattering film. The via openings can be vertically extended through the semiconductor material layer at least to a bottom surface of the semiconductor material layer by performing a second anisotropic etch process employing the cladding liner as an etch mask.

Public/Granted literature

US11972954B2 Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings Public/Granted day:2024-04-30

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀