Invention Application
- Patent Title: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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Application No.: US17645779Application Date: 2021-12-23
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Publication No.: US20220208567A1Publication Date: 2022-06-30
- Inventor: Mikio Nakashima , Shota Umezaki , Hiroaki Inadomi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2020-215410 20201224
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02

Abstract:
A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.
Public/Granted literature
- US12283495B2 Substrate processing apparatus and substrate processing method Public/Granted day:2025-04-22
Information query
IPC分类: