公开(公告)号：US20220319876A1

公开(公告)日：2022-10-06

申请号：US17657821

申请日：2022-04-04

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hayashi ,  Hiroaki Inadomi ,  Shota Umezaki ,  Suguru Enokida ,  Kouji Kimoto

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677 ,  B08B3/08 ,  B08B13/00

Abstract: A substrate processing apparatus includes multiple first substrate processing devices, one or more second substrate processing devices and a transfer unit. Each of the multiple first substrate processing devices is configured to process a substrate one by one. The one or more second substrate processing devices are configured to simultaneously process multiple substrates, which are processed in the multiple first substrate processing devices. The transfer unit is configured to simultaneously carry the multiple substrates, which are processed in the multiple first substrate processing devices, into a same second substrate processing device.

公开(公告)号：US11139181B2

公开(公告)日：2021-10-05

申请号：US16143694

申请日：2018-09-27

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi ,  Tooru Nakamura ,  Kouji Kimoto ,  Yoshihisa Aoyama

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  B05C11/10

Abstract: A substrate processing apparatus according to an embodiment includes a transport block and a plurality of processing blocks. In the transport block, a transport device for transporting a substrate is disposed. The plurality of processing blocks are disposed adjacent to the transport block and process the substrate transported by the transport device. Each processing block includes one liquid processing unit and one drying unit. The liquid processing unit performs a liquid film forming processing so as to form a liquid film on the top surface of the substrate. The drying unit performs a supercritical drying processing in which the substrate is dried by bringing the substrate into contact with the processing fluid in a supercritical state. The liquid processing unit and the drying unit included in the same processing block are disposed on the same side with respect to the movement direction of the transport device of the transport block.

公开(公告)号：US20200168482A1

公开(公告)日：2020-05-28

申请号：US16690340

申请日：2019-11-21

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi ,  Satoshi Biwa ,  Satoshi Okamura

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus configured to perform a drying processing of drying substrates by using a processing fluid in a supercritical state includes a processing vessel and multiple holders. In the processing vessel, the drying processing is performed. The multiple holders are respectively configured to hold the substrates within the processing vessel.

公开(公告)号：US20170287742A1

公开(公告)日：2017-10-05

申请号：US15467001

申请日：2017-03-23

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi ,  Tooru Nakamura ,  Kouji Kimoto ,  Yasuo Kiyohara ,  Satoshi Okamura ,  Satoshi Biwa ,  Nobuya Yamamoto ,  Katsuhiro Ookawa ,  Keiichi Yahata ,  Tetsuro Nakahara

IPC: H01L21/67 ,  B08B3/08 ,  B08B3/02 ,  B08B3/10

Abstract: Provided is a substrate processing apparatus including a liquid processing unit that performs a liquid processing on a substrate; a drying processing unit that performs a drying processing on the substrate in a wet state; a first conveyance unit that conveys the substrate to the liquid processing unit; a second conveyance unit that conveys the substrate in the wet state from the liquid processing unit to the drying processing unit; and a third conveyance unit that conveys the substrate before the liquid processing in the liquid processing unit and to convey the substrate after the drying processing from the drying processing unit. The first and second conveyance units and the drying processing unit are disposed on a side that faces the third conveyance unit, and the liquid processing unit is disposed on a side that faces the first and second conveyance units and is opposite to the third conveyance unit.

公开(公告)号：US20170236729A1

公开(公告)日：2017-08-17

申请号：US15432044

申请日：2017-02-14

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Kouzou Tachibana ,  Mitsunori Nakamori ,  Kotaro Ooishi ,  Keisuke Egashira ,  Koji Tanaka ,  Hiroaki Inadomi ,  Masami Yamashita ,  Yoshiteru Fukuda ,  Koji Yamashita ,  Yu Tsurifune ,  Takuro Masuzumi

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/04 ,  B08B3/10 ,  B08B3/14 ,  H01L21/02 ,  B08B3/08

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/67028

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

公开(公告)号：US12283495B2

公开(公告)日：2025-04-22

申请号：US17645779

申请日：2021-12-23

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  F26B5/00 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

公开(公告)号：US11735439B2

公开(公告)日：2023-08-22

申请号：US17949437

申请日：2022-09-21

Applicant: Tokyo Electron Limited

Inventor： Yasuo Kiyohara ,  Hiroaki Inadomi ,  Satoshi Okamura

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/10 ,  B08B5/00 ,  H01L21/677

CPC classification number: H01L21/67034 ,  B08B3/10 ,  B08B5/00 ,  H01L21/67703 ,  H01L21/67748

Abstract: A processing fluid supplying method includes: supplying a processing fluid of a gaseous state to a circulation line; generating a processing fluid of a liquid state by cooling the processing fluid of the gaseous state in the circulation line; branching the processing fluid of the liquid state from the circulation line to a branch line; and generating a processing fluid of a supercritical state by heating the processing fluid of the liquid state in the circulation line.

公开(公告)号：US11295965B2

公开(公告)日：2022-04-05

申请号：US16188671

申请日：2018-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei Yamada ,  Hiroaki Inadomi ,  Satoshi Biwa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677 ,  B08B9/093 ,  B08B3/02

Abstract: A cleaning apparatus of a substrate processing apparatus according to an exemplary embodiment includes a nozzle and a scanner. The nozzle ejects a gas toward in an inner wall surface of a processing chamber in which a substrate is processed. The scanner causes the nozzle to scan along the inner wall surface of the processing chamber in the processing chamber.

公开(公告)号：US09449857B2

公开(公告)日：2016-09-20

申请号：US13906546

申请日：2013-05-31

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67034 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67075 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67748 ,  H01L21/67751

Abstract: A substrate processing apparatus is provided including: a liquid processing unit that processes a substrate with a processing liquid; a carry-in port formed in the liquid processing unit and configured to carry-in the substrate in a dry-state before the substrate is processed with the processing liquid; a carry-out port formed in the liquid processing unit and configured to carry-out the substrate in a wet-state after completing the liquid processing; a supercritical dry processing unit that performs a dry processing for the substrate using a supercritical fluid; a first substrate transport unit that transports the substrate in a dry-state before the substrate is processed with the processing liquid to the carry-out port of the liquid processing unit; and a second substrate transport unit that transports the substrate in a wet-state after completing the liquid processing from the carry-out port of the liquid processing unit to the supercritical dry processing unit.

Abstract translation: 提供了一种基板处理装置，包括：处理液体处理基板的液体处理单元; 形成在所述液体处理单元中并构造成在用所述处理液处理所述基板之前以干态运送所述基板的携带口; 形成在所述液体处理单元中并构造成在完成所述液体处理之后在湿态下执行所述基板的进出口; 超临界干燥处理单元，其使用超临界流体对所述基板进行干法处理; 第一基板输送单元，其在基板被处理之前以干燥状态将基板输送到液体处理单元的进出口; 以及第二基板输送单元，其在从液体处理单元的进出口向超临界干燥处理单元完成液体处理之后将湿气状态的基板输送。

公开(公告)号：US20240339339A1

公开(公告)日：2024-10-10

申请号：US18750287

申请日：2024-06-21

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/673 ,  H01L21/677

CPC classification number: H01L21/67034 ,  H01L21/67126 ,  H01L21/67383 ,  H01L21/67748 ,  H01L21/02101

Abstract: A substrate processing apparatus includes a transfer block in which a transfer device configured to transfer a substrate is placed, and a processing block provided adjacent to the transfer block. The processing block includes a liquid film forming unit configured to form a liquid film on a top surface of the substrate which is held horizontally, and a drying unit configured to replace the liquid film with a supercritical fluid to dry the substrate. The drying unit includes a pressure vessel having therein a drying chamber for the substrate, a cover body configured to close an opening of the drying chamber, and a supporting body configured to support the substrate horizontally in the drying chamber. The supporting body is fixed to the drying chamber. The transfer device advances into the drying chamber through the opening of the drying chamber while holding horizontally the substrate having the liquid film thereon.