公开(公告)号：US10937669B2

公开(公告)日：2021-03-02

申请号：US15989744

申请日：2018-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kosuke Fukuda ,  Mikio Nakashima ,  Kazuyoshi Shinohara ,  Hiroyuki Higashi

IPC: H01L21/67

Abstract: A substrate solution-treatment apparatus includes: a substrate holding part for holding a substrate; a nozzle for supplying a treatment solution onto the substrate; a supply line; a flow rate control mechanism including a flow rate meter and a flow rate control valve installed in the supply line; an opening/closing valve installed in the supply line; and a control part for controlling operations of the flow rate control mechanism and the opening/closing valve. The flow rate control mechanism controls the flow rate control valve such that a detection value of the flow rate meter coincides with a flow rate target value provided from the control part. The control part controls the nozzle to supply the treatment solution onto the substrate with the opening/closing valve opened, and provides a first flow rate as the flow rate target value to the flow rate control mechanism.

公开(公告)号：US08661704B2

公开(公告)日：2014-03-04

申请号：US13625980

申请日：2012-09-25

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima

IPC: F26B11/18 ,  F26B25/18 ,  F26B21/14 ,  F26B3/00

CPC classification number: F26B3/00 ,  H01L21/67017 ,  H01L21/67034

Abstract: Provided is substrate processing apparatus including processing chamber that dries substrate W using high temperature and high pressure fluid, raw material accommodating unit that accommodates raw material in liquid state, and supplying unit that supplies the high temperature and high pressure fluid to the processing chamber. The supplying unit includes sealable outer vessel connected to the processing chamber and the raw material accommodating unit, and inner vessel provided within the outer vessel and configured to receive the raw material. The inner vessel is provided with opened holes portions configured to drop down the raw material toward a portion of the outer vessel to be heated. After the raw material is accommodated in the inner vessel, the raw material is contacted with the portion to be heated and then heated. A high temperature and high pressure fluid is then obtained and supplied to the processing chamber.

Abstract translation: 提供了包括使用高温高压流体干燥基板W的处理室，容纳液态原料的原料容纳单元以及向处理室供给高温高压流体的供给单元的基板处理装置。 供给单元包括连接到处理室和原料容纳单元的可密封外部容器，以及设置在外部容器内并构造成容纳原料的内部容器。 内部容器设置有开口孔部分，其构造成将原材料朝向要加热的外部容器的一部分下落。 在原料容纳在内容器中之后，原料与待加热部分接触，然后加热。 然后获得高温和高压流体并将其供应到处理室。

公开(公告)号：US12283495B2

公开(公告)日：2025-04-22

申请号：US17645779

申请日：2021-12-23

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  F26B5/00 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

公开(公告)号：US11880213B2

公开(公告)日：2024-01-23

申请号：US17320733

申请日：2021-05-14

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Akinori Tanaka ,  Nobuhiro Ogata ,  Isamu Miyamoto

IPC: G05D7/06 ,  H01L21/67 ,  B05C11/10 ,  G01M3/38 ,  G01F1/661

CPC classification number: G05D7/0635 ,  B05C11/1026 ,  H01L21/6708 ,  H01L21/67023 ,  H01L21/67253 ,  G01F1/661 ,  G01M3/38

Abstract: A substrate liquid processing apparatus includes: at least one liquid pipe through which a processing liquid flows; a discharge nozzle configured to discharge the processing liquid supplied via the at least one liquid pipe; a valve mechanism configured to regulate a flow of the processing liquid in the at least one liquid pipe; and a liquid detection sensor configured to detect presence or absence of the processing liquid in the at least one liquid pipe, wherein in a state in which the valve mechanism is operating so that the processing liquid in the at least one liquid pipe is located at an upstream of a first pipe measurement site of the at least one liquid pipe, the liquid detection sensor detects the presence or absence of the processing liquid at the first pipe measurement site located at a first measurement point.

公开(公告)号：US20220208567A1

公开(公告)日：2022-06-30

申请号：US17645779

申请日：2021-12-23

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Shota Umezaki ,  Hiroaki Inadomi

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

公开(公告)号：US09003674B2

公开(公告)日：2015-04-14

申请号：US14033829

申请日：2013-09-23

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Yuji Kamikawa

IPC: F26B5/00 ,  F26B5/16 ,  B01D1/02 ,  B01D1/30 ,  B01D1/06 ,  B01B1/00

CPC classification number: B01D1/065 ,  B01B1/005 ,  B01D1/02 ,  B01D1/30 ,  F26B5/00 ,  F26B5/16

Abstract: Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.

Abstract translation: 公开了一种蒸发器，蒸发方法和基板处理装置，其可以增加有机溶剂的产生蒸气的浓度并有效地加热有机溶剂。 蒸发器包括流体管，用于将有机溶剂液体供给到流体管的一端的液体有机溶剂供给装置，以及用于加热流体管的加热单元。 流体管具有从一端到另一端增加的横截面。 当提供给流体管的一端的有机溶剂液体被加热时，有机溶剂蒸气从流体管的另一端排出。 基板处理装置包括上述蒸发器。

公开(公告)号：US20240242977A1

公开(公告)日：2024-07-18

申请号：US18412768

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Takahiro Hayashida ,  Mikio Nakashima ,  Takafumi Yasunaga

IPC: H01L21/67

CPC classification number: H01L21/67023 ,  H01L21/67167 ,  H01L21/67196

Abstract: A substrate processing apparatus includes a unit block including multiple liquid film forming devices each configured to form a liquid film on a top surface of a substrate, and a drying device configured to replace the liquid film with a supercritical fluid to dry the substrate; and a transfer block provided between the multiple liquid film forming devices and the drying device. The transfer block includes a transfer device configured to transfer the substrate between the multiple liquid film forming devices and the drying device, and a length of a transfer path of the substrate is equal between each of the multiple liquid film forming devices and the drying device.

公开(公告)号：US11094568B2

公开(公告)日：2021-08-17

申请号：US15960800

申请日：2018-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji Nakamizo ,  Satoshi Morita ,  Akinori Tanaka ,  Hiroshi Komiya ,  Mikio Nakashima ,  Kousuke Fukuda ,  Youichi Masaki ,  Ryoji Ando ,  Ikuo Sunaka

IPC: H01L21/67 ,  G01F9/00 ,  G01M3/28 ,  G01F25/00 ,  G05B23/02 ,  G01F15/00

Abstract: A processing apparatus includes a chamber configured to accommodate a substrate to be processed, a nozzle provided in the chamber and configured to supply a processing solution to the substrate, a flow rate measuring part configured to measure a flow rate of the processing solution supplied to the nozzle, a flow path opening/closing part configured to open and close a supply flow path of the processing solution to the nozzle, and a controller configured to output a close signal causing the flow path opening/closing part to perform a closing operation that closes the supply flow path. The controller is configured to detect an operation abnormality of the flow path opening/closing part based on an accumulated amount of the flow rate measured by the flow rate measuring part after outputting the close signal.

公开(公告)号：US11056357B2

公开(公告)日：2021-07-06

申请号：US15423815

申请日：2017-02-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mikio Nakashima ,  Katsuya Koga

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/04

Abstract: A substrate processing system includes multiple assemblies framed and including such that each of the assemblies includes a substrate processing apparatus which supplies a processing fluid to a substrate and processes the substrate, a fluid supply control apparatus including a fluid control device which controls flow of the processing fluid supplied to the substrate processing apparatus, and a drive equipment apparatus including a drive device which drives movement of the fluid control device in the fluid supply control apparatus.

公开(公告)号：US09348340B2

公开(公告)日：2016-05-24

申请号：US14456319

申请日：2014-08-11

Applicant: Tokyo Electron Limited

Inventor： Mikio Nakashima ,  Shozou Maeda ,  Yuusuke Takamatsu

IPC: G05D11/00 ,  G05D7/06 ,  H01L21/67

CPC classification number: G05D7/0664 ,  H01L21/67017 ,  Y10T137/85986

Abstract: A liquid processing apparatus includes a first line to which a processing liquid pressurized by a pump is sent from a processing liquid supply source; a plurality of second lines into which the pressurized processing liquid flowing through the first line flows; a branch line connected to a branch point on each of the second lines; a liquid processing unit configured to process a substrate with the processing liquid; an orifice provided at an upstream side of the branch point; and a first control valve provided at a downstream side of the branch point. The first control valve changes an amount of the processing liquid flowing to a downstream side of the first control valve to control a pressure of the processing liquid in a section between the orifice of the second line and the first control valve, and to control a flow rate of the processing liquid.

Abstract translation: 液体处理装置包括：由处理液供给源送出由泵加压的处理液的第一管路; 流经第一管线的加压处理液体流过的多条第二管线; 连接到每条第二线上的分支点的分支线; 液体处理单元，被配置为用所述处理液处理基板; 设置在分支点的上游侧的孔口; 以及设置在分支点的下游侧的第一控制阀。 第一控制阀改变流到第一控制阀的下游侧的处理液的量，以控制处理液在第二管孔与第一控制阀之间的截面中的压力，并控制流量 处理液的速率。