Invention Application
- Patent Title: DEVICE COMPRISING A TRANSISTOR
-
Application No.: US17734486Application Date: 2022-05-02
-
Publication No.: US20220254879A1Publication Date: 2022-08-11
- Inventor: Alexis GAUTHIER , Pascal CHEVALIER , Gregory AVENIER
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Priority: FR1909283 20190819
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8222 ; H01L29/66 ; H01L29/732
Abstract:
A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
Public/Granted literature
- US11776995B2 Device comprising a transistor Public/Granted day:2023-10-03
Information query
IPC分类:
