An integrated circuit die includes a silicon chromium (SiCr) thin film resistor disposed on a first oxide layer. The SiCr thin film resistor has a resistor body and a resistor head. A second oxide layer overlays the SiCr thin film resistor. The second oxide layer has an opening exposing a surface of the resistor head. A metal pad is disposed in the opening in the second oxide layer and is contact with the surface of the resistor head exposed by the opening. Further, an interlevel dielectric layer is disposed on the second oxide layer overlaying the SiCr thin film resistor. A metal-filled via extends from a top surface of interlevel dielectric layer through the interlevel dielectric layer and contacts the metal pad disposed in the opening in the second oxide layer.