Invention Application
- Patent Title: SEMICONDUCTOR STORAGE DEVICE
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Application No.: US17411733Application Date: 2021-08-25
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Publication No.: US20220302169A1Publication Date: 2022-09-22
- Inventor: Keisuke TAKAGI , Kazuhiro MATSUO , Kunifumi SUZUKI , Yuuichi KAMIMUTA , Taro SHIOKAWA , Masumi SAITOH , Yuta KAMIYA , Kota TAKAHASHI
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2021-042328 20210316
- Main IPC: H01L27/11597
- IPC: H01L27/11597 ; G11C16/04 ; H01L27/1157 ; H01L27/11582
Abstract:
A semiconductor storage device includes a channel layer extending along a first direction and including titanium oxide, an electrode layer extending along a second direction crossing the first direction, and a ferroelectric layer between the channel layer and the electrode layer and including titanium.
Information query
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