公开(公告)号：US20220302169A1

公开(公告)日：2022-09-22

申请号：US17411733

申请日：2021-08-25

Applicant: KIOXIA CORPORATION

Inventor： Keisuke TAKAGI ,  Kazuhiro MATSUO ,  Kunifumi SUZUKI ,  Yuuichi KAMIMUTA ,  Taro SHIOKAWA ,  Masumi SAITOH ,  Yuta KAMIYA ,  Kota TAKAHASHI

IPC: H01L27/11597 ,  G11C16/04 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor storage device includes a channel layer extending along a first direction and including titanium oxide, an electrode layer extending along a second direction crossing the first direction, and a ferroelectric layer between the channel layer and the electrode layer and including titanium.

公开(公告)号：US20230299206A1

公开(公告)日：2023-09-21

申请号：US17899909

申请日：2022-08-31

Applicant: Kioxia Corporation

Inventor： Keiko SAKUMA ,  Taro SHIOKAWA ,  Kiwamu SAKUMA

IPC: H01L29/786 ,  H01L27/108

CPC classification number: H01L29/7869 ,  H01L29/78609 ,  H01L27/10805

Abstract: A semiconductor device includes: a first electrode; a second electrode; a first oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode around the first oxide semiconductor layer; a second oxide semiconductor layer provided between the gate electrode and the first oxide semiconductor layer, and separated from the first electrode; and a gate insulating layer provided between the gate electrode and the second oxide semiconductor layer.

公开(公告)号：US20240057313A1

公开(公告)日：2024-02-15

申请号：US18179620

申请日：2023-03-07

Applicant: Kioxia Corporation

Inventor： Taro SHIOKAWA ,  Takeru MAEDA ,  Kotaro NODA ,  Shosuke FUJII

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: A semiconductor device includes a semiconductor substrate, a first layer formed on the semiconductor substrate and including a semiconductor element and a first insulating film, a second layer formed above the first layer and including a channel including an oxide semiconductor and a second insulating film, and a third layer formed above the second layer, and including an electrode formed on the channel and a third insulating film having a film density less than at least one of a film density of the first insulating film or a film density of the second insulating film.

公开(公告)号：US20230197857A1

公开(公告)日：2023-06-22

申请号：US17842457

申请日：2022-06-16

Applicant: Kioxia Corporation

Inventor： Taro SHIOKAWA ,  Kiwamu SAKUMA ,  Keiko SAKUMA ,  Mutsumi OKAJIMA ,  Kazuhiro MATSUO ,  Masaya TODA

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/66

CPC classification number: H01L29/78642 ,  H01L27/1082 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/10873

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode and including a first region surrounded by the first electrode in a plane perpendicular to a first direction from the first electrode toward the second electrode; a gate electrode facing the oxide semiconductor layer; a gate insulating layer; a first insulating layer between the gate electrode and the first electrode; and a second insulating layer between the gate electrode and the second electrode. A first maximum distance between a first portion of the first electrode and a second portion of the first electrode in a second direction in a cross section parallel to the first direction is larger than a minimum distance between a third portion of the first insulating layer and a fourth portion of the first insulating layer in the second direction.

公开(公告)号：US20230328957A1

公开(公告)日：2023-10-12

申请号：US17929422

申请日：2022-09-02

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Tomoki ISHIMARU ,  Ha HOANG ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Takafumi OCHIAI ,  Shoji HONDA ,  Kenichiro TORATANI ,  Kiwamu SAKUMA ,  Taro SHIOKAWA ,  Mutsumi OKAJIMA

IPC: H01L27/108

CPC classification number: H01L27/10805

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.