中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

12 records (took 0.014 seconds)

    MEMORY DEVICE
    5.
    发明公开
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20230170018A1

    公开(公告)日：2023-06-01

    申请号：US17841287

    申请日：2022-06-15

    Applicant: Kioxia Corporation

    Inventor： Kunifumi SUZUKI ,  Yuuichi KAMIMUTA

    IPC: G11C13/00 ,  G11C5/06

    CPC classification number: G11C13/004 ,  G11C13/0069 ,  G11C13/0038 ,  G11C13/0004 ,  G11C5/06

    Abstract: According to one embodiment, a memory device includes a memory cell including a resistance change memory portion and a switching portion, and a voltage applying circuit carrying out, at a time of writing data to the memory cell, an operation of applying a voltage of a first polarity to the memory cell and applying a first voltage to the memory cell, an operation of applying a voltage of a second polarity to the memory cell and applying a second voltage to the memory cell, an operation of applying a voltage of the first polarity to the memory cell and applying a third voltage to the memory cell, or an operation of applying a voltage of the second polarity to the memory cell and applying a fourth voltage to the memory cell.

    SEMICONDUCTOR MEMORY DEVICE
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20230084292A1

    公开(公告)日：2023-03-16

    申请号：US17654654

    申请日：2022-03-14

    Applicant: KIOXIA CORPORATION

    Inventor： Kunifumi SUZUKI ,  Yuuichi KAMIMUTA

    IPC: H01L27/11597 ,  H01L27/11556 ,  H01L27/11582 ,  G11C11/22

    Abstract: A semiconductor memory device includes: a first semiconductor layer extending in a first direction; a first conductive layer and a second conductive layer that are arranged in the first direction and each opposed to the first semiconductor layer; a first insulating portion disposed between the first semiconductor layer and the first conductive layer, the first insulating portion containing oxygen (O) and hafnium (Hf); a second insulating portion disposed between the first semiconductor layer and the second conductive layer, the second insulating portion containing oxygen (O) and hafnium (Hf); and a first charge storage layer disposed between the first insulating portion and the second insulating portion, the first charge storage layer being spaced from the first conductive layer and the second conductive layer.

    STORAGE DEVICE
    7.
    发明申请
    STORAGE DEVICE 有权

    公开(公告)号：US20220399489A1

    公开(公告)日：2022-12-15

    申请号：US17549236

    申请日：2021-12-13

    Applicant: Kioxia Corporation

    Inventor： Kunifumi SUZUKI ,  Yuuichi KAMIMUTA

    IPC: H01L45/00 ,  H01L27/24 ,  H01L23/48

    Abstract: A storage device 10 includes a phase change layer 40 containing tellurium, and a diffusion layer 50 containing at least one of germanium, silicon, carbon, tin, aluminum, gallium, and indium and disposed at a position adjacent to the phase change layer 40. The phase change layer 40 is capable of changing between a first state and a second state different from each other in electric resistance. The phase change layer 40 is in a crystal state in any of the first state and the second state. A length of the diffusion layer 50 in a direction orthogonal to a z direction is shorter than a length of the phase change layer 40 in the direction orthogonal to the z direction.

    SEMICONDUCTOR MEMORY DEVICE
    8.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20250017020A1

    公开(公告)日：2025-01-09

    申请号：US18762786

    申请日：2024-07-03

    Applicant: Kioxia Corporation

    Inventor： Yoko YOSHIMURA ,  Kiwamu Sakuma ,  Kunifumi SUZUKI ,  Hidesato ISHIDA

    IPC: H10B51/20 ,  H01L21/28 ,  H01L23/528 ,  H01L23/532 ,  H01L29/51

    Abstract: A semiconductor memory device includes a semiconductor layer; a gate electrode; a first insulating film provided between the semiconductor layer and the gate electrode, and including at least one of oxygen, hafnium, or a first additive element; and a second insulating film provided between the first insulating film and the gate electrode. The first insulating film includes a first additive region, a second additive region provided between the first additive region and the gate electrode, and a memory region provided between the first additive region and the second additive region. The first additive region includes a second additive element selected from a group consisting of ruthenium, titanium, molybdenum, tantalum, tungsten, platinum, and combinations thereof. The second additive region includes a third additive element selected group consisting of ruthenium, titanium, molybdenum, tantalum, tungsten, platinum, and combinations thereof.

    MEMORY DEVICE
    9.
    发明申请
    MEMORY DEVICE 有权

    公开(公告)号：US20220399488A1

    公开(公告)日：2022-12-15

    申请号：US17587267

    申请日：2022-01-28

    Applicant: KIOXIA CORPORATION

    Inventor： Kunifumi SUZUKI ,  Yuuichi KAMIMUTA

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A memory device includes a first interconnect layer, a second interconnect layer, a phase-change layer, and an adjacent layer. The phase-change layer is disposed between the first interconnect layer and the second interconnect layer and configured to reversibly transition between a crystalline state and an amorphous state. The adjacent layer contacts the phase-change layer and comprises tellurium and at least one of titanium, zirconium, or hafnium.

    SEMICONDUCTOR MEMORY DEVICE
    10.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20220302170A1

    公开(公告)日：2022-09-22

    申请号：US17447352

    申请日：2021-09-10

    Applicant: Kioxia Corporation

    Inventor： Kunifumi SUZUKI ,  Yuuichi KAMIMUTA

    IPC: H01L27/11597 ,  H01L29/51

    Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a first gate electrode layer; a second gate electrode layer provided apart from the first gate electrode layer in the first direction; and a gate insulating layer containing oxygen and at least one metal element of hafnium or zirconium, the gate insulating layer including a first region between the first gate electrode layer and the semiconductor layer, a second region between the first gate electrode layer and the second gate electrode layer, and a third region between the second gate electrode layer and the semiconductor layer, the first region including a crystal of an orthorhombic crystal system or a trigonal crystal system as a main constituent substance, and a distance between the second region and the semiconductor layer being larger than a distance between the first region and the semiconductor layer.

Patent Agency Ranking