Invention Application
- Patent Title: EUV MASK BLANK AND METHOD OF MAKING EUV MASK BLANK
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Application No.: US17481673Application Date: 2021-09-22
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Publication No.: US20220342292A1Publication Date: 2022-10-27
- Inventor: Ping-Hsun LIN , Pei-Cheng HSU , Ching-Fang YU , Ta-Cheng LIEN , Chia-Jen CHEN , Hsin-Chang LEE
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: G03F1/24
- IPC: G03F1/24
Abstract:
An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.
Public/Granted literature
- US11815804B2 EUV mask blank and method of making EUV mask blank Public/Granted day:2023-11-14
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