公开(公告)号：US20210341829A1

公开(公告)日：2021-11-04

申请号：US16863939

申请日：2020-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang HSUEH ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/60 ,  G03F1/80

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

公开(公告)号：US20230161241A1

公开(公告)日：2023-05-25

申请号：US17749033

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Wei-Hao LEE ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Ching-Fang YU

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

公开(公告)号：US20230152681A1

公开(公告)日：2023-05-18

申请号：US18151416

申请日：2023-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22

Abstract: A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.

公开(公告)号：US20220221785A1

公开(公告)日：2022-07-14

申请号：US17707712

申请日：2022-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang HSUEH ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

公开(公告)号：US20220137499A1

公开(公告)日：2022-05-05

申请号：US17331517

申请日：2021-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.

公开(公告)号：US20210373436A1

公开(公告)日：2021-12-02

申请号：US17109878

申请日：2020-12-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Hao-Ping CHENG ,  Ta-Cheng LIEN

IPC: G03F1/82 ,  G03F1/64

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

公开(公告)号：US20210373430A1

公开(公告)日：2021-12-02

申请号：US17103023

申请日：2020-11-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20200057363A1

公开(公告)日：2020-02-20

申请号：US16534968

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Ping-Hsun LIN ,  Shih-Che WANG ,  Hsin-Chang LEE

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54

Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.

公开(公告)号：US20230375921A1

公开(公告)日：2023-11-23

申请号：US18365749

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F7/004 ,  H01L21/033

CPC classification number: G03F7/0042 ,  H01L21/0332 ,  H01L21/0337

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

公开(公告)号：US20230161261A1

公开(公告)日：2023-05-25

申请号：US17745576

申请日：2022-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Huan-Ling LEE ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F7/20

CPC classification number: G03F7/70033

Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.