公开(公告)号：US20150255272A1

公开(公告)日：2015-09-10

申请号：US14716917

申请日：2015-05-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hao HSU ,  Chia-Chen CHEN ,  Jui-Ching WU ,  Shang-Chieh CHIEN ,  Chia-Jen CHEN ,  Chia-Ching HUANG

IPC: H01L21/027 ,  G03F1/22 ,  G03F7/20

CPC classification number: H01L21/0274 ,  G03F1/14 ,  G03F1/22 ,  G03F1/24 ,  G03F7/70283

Abstract: A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained.

Abstract translation: 用于极紫外（euv）光刻工具的掩模版包括形成在掩模版的图像周围形成的不透明边界中的沟槽。 沟槽涂有吸收材料。 掩模版用于与光掩模掩模结合的电子光刻工具，并且掩模版掩模的定位和沟槽的存在组合以防止任何发散的辐射束到达衬底上的任何不期望的区域被图案化。 以这种方式，只有基板的曝光场暴露于euv辐射。 保持相邻区域中的模式完整性。

公开(公告)号：US20210055646A1

公开(公告)日：2021-02-25

申请号：US17080652

申请日：2020-10-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Cheng CHEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Shih-Ming CHANG ,  Tran-Hui SHEN ,  Yen-Cheng HO ,  Chen-Shao HSU

IPC: G03F1/36 ,  G03F1/76 ,  G03F1/78

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US20250123552A1

公开(公告)日：2025-04-17

申请号：US18628337

申请日：2024-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Hsuan-I WANG ,  Ping-Hsun LIN ,  Ching-Fang YU ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/58 ,  G03F1/24 ,  G03F1/76 ,  G03F1/80 ,  G03F7/00

Abstract: An extreme ultraviolet (EUV) mask and method of forming an EUV mask are provided. The method includes forming a mask layer on a semiconductor wafer, generating extreme ultraviolet (EUV) light by a lithography exposure system, forming patterned EUV light by patterning the EUV light by a mask including an absorber having extinction coefficient at an EUV wavelength that exceeds extinction coefficients of TaBN and TaN at the EUV wavelength, and exposing the mask layer by the patterned EUV light.

公开(公告)号：US20220037171A1

公开(公告)日：2022-02-03

申请号：US16944026

申请日：2020-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Yang LIN ,  Chung-Hsuan LIU ,  Ku-Hsiang SUNG ,  Kuan-Wen LIN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B5/00 ,  B08B7/04 ,  B08B13/00

Abstract: A wafer cleaning module and a method for cleaning a wafer with the wafer cleaning module are disclosed. For example, the wafer cleaning module includes a wafer chuck to hold a wafer, an ozone source to provide ozone gas towards the wafer, and an ultraviolet (UV) lamp module to provide UV light. The UV lamp module includes a UV light source and a rotatable reflector around the UV light source. The rotatable reflector is movable to adjust an amount of UV light directed towards a surface of the wafer.

公开(公告)号：US20190146325A1

公开(公告)日：2019-05-16

申请号：US16128863

申请日：2018-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang HSUEH ,  Huan-Ling LEE ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/22 ,  G03F1/52 ,  G03F1/58 ,  G03F1/48

Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.

公开(公告)号：US20230013260A1

公开(公告)日：2023-01-19

申请号：US17716522

申请日：2022-04-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Jhih LIN ,  Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F7/20 ,  G03F1/24 ,  G03F1/56 ,  G03F7/09

Abstract: A method for lithographically patterning a photoresist is provided. The method includes receiving a wafer with the photoresist and exposing the photoresist using an extreme ultraviolet (EUV) radiation reflected by an EUV mask. The EUV mask includes a substrate, a reflective multilayer stack on the substrate, a capping layer on the reflective multilayer stack, a patterned absorber layer on the capping layer. The patterned absorber layer includes a matrix metal and an interstitial element occupying interstitial sites of the matrix metal, and a size ratio of the interstitial element to the matrix metal is from about 0.41 to about 0.59.

公开(公告)号：US20220342292A1

公开(公告)日：2022-10-27

申请号：US17481673

申请日：2021-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ping-Hsun LIN ,  Pei-Cheng HSU ,  Ching-Fang YU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

公开(公告)号：US20210405519A1

公开(公告)日：2021-12-30

申请号：US17090825

申请日：2020-11-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Chia-Jen CHEN ,  Pei-Cheng HSU ,  Ta-Cheng LIEN

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033 ,  H01L21/027

Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

公开(公告)号：US20190155140A1

公开(公告)日：2019-05-23

申请号：US15967159

申请日：2018-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Yen-Cheng HO ,  Chih-Cheng LIN ,  Chia-Jen CHEN

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54 ,  G03F1/68

Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

公开(公告)号：US20190148110A1

公开(公告)日：2019-05-16

申请号：US15966862

申请日：2018-04-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Cheng CHEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Shih-Ming CHANG ,  Tran-Hui SHEN ,  Yen-Cheng HO ,  Chen-Shao HSU

IPC: H01J37/317 ,  G03F1/76 ,  G03F7/20

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.