Invention Application
- Patent Title: CMP Process and Methods Thereof
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Application No.: US17844563Application Date: 2022-06-20
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Publication No.: US20220367200A1Publication Date: 2022-11-17
- Inventor: Che-Lun Chang , Pin-Chuan Su , Hsin-Chieh Huang , Ming-Yuan Wu , Tzu kai Lin , Yu-Wen Wang , Che-Yuan Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/308 ; H01L21/311 ; H01L21/3065 ; H01L21/02
Abstract:
A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.
Public/Granted literature
- US12131911B2 CMP process and methods thereof Public/Granted day:2024-10-29
Information query
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