公开(公告)号：US12131911B2

公开(公告)日：2024-10-29

申请号：US17844563

申请日：2022-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Lun Chang ,  Pin-Chuan Su ,  Hsin-Chieh Huang ,  Ming-Yuan Wu ,  Tzu kai Lin ,  Yu-Wen Wang ,  Che-Yuan Hsu

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L21/30625 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/66636

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

公开(公告)号：US20220367200A1

公开(公告)日：2022-11-17

申请号：US17844563

申请日：2022-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Lun Chang ,  Pin-Chuan Su ,  Hsin-Chieh Huang ,  Ming-Yuan Wu ,  Tzu kai Lin ,  Yu-Wen Wang ,  Che-Yuan Hsu

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/02

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

公开(公告)号：US20240371649A1

公开(公告)日：2024-11-07

申请号：US18775109

申请日：2024-07-17

Applicant: Taiwan Semiconductor Manufacturing Co, Ltd.

Inventor： Che-Lun Chang ,  Pin-Chuan Su ,  Hsin-Chieh Huang ,  Ming-Yuan Wu ,  Tzu kai Lin ,  Yu-Wen Wang ,  Che-Yuan Hsu

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

公开(公告)号：US20230364734A1

公开(公告)日：2023-11-16

申请号：US18359180

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pin-Chuan Su ,  Jeng-Chi Lin ,  Guan-Yi Lee ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B37/20 ,  H01L21/306 ,  H01L21/321

CPC classification number: B24B37/20 ,  H01L21/30625 ,  H01L21/3212

Abstract: An embodiment is a polishing pad including a top pad and a sub pad that is below and contacting the top pad. The top pad includes top grooves along a top surface and microchannels extending from the top grooves to a bottom surface of the top pad. The sub pad includes sub grooves along a top surface of the sub pad.

公开(公告)号：US20220359191A1

公开(公告)日：2022-11-10

申请号：US17872620

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hui-Chi Huang ,  Jeng-Chi Lin ,  Pin-Chuan Su ,  Chien-Ming Wang ,  Kei-Wei Chen

IPC: H01L21/02 ,  B08B7/04 ,  B08B1/00 ,  B08B3/08 ,  B08B5/04 ,  A46B13/04 ,  B08B1/04

Abstract: A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

公开(公告)号：US11387109B1

公开(公告)日：2022-07-12

申请号：US17193693

申请日：2021-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Lun Chang ,  Pin-Chuan Su ,  Hsin-Chieh Huang ,  Ming-Yuan Wu ,  Tzu kai Lin ,  Yu-Wen Wang ,  Che-Yuan Hsu, deseased

IPC: H01L21/306 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/308

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

公开(公告)号：US11031391B2

公开(公告)日：2021-06-08

申请号：US16590248

申请日：2019-10-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shen-Nan Lee ,  Kuo-Yin Lin ,  Pin-Chuan Su ,  Teng-Chun Tsai

IPC: H01L21/8238 ,  H01L27/088 ,  H01L27/12 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/06 ,  H01L29/66

Abstract: A method includes following steps. A semiconductor substrate is etched to form semiconductor fins. A dielectric material is deposited into a trench between the semiconductor fins. The semiconductor fins are etched such that top ends of the semiconductor fins are lower than a top surface of the dielectric material. After etching the semiconductor fins, epitaxially growing epitaxial fins on the semiconductor fins, respectively. A chemical mechanical polish (CMP) process is performed on the epitaxial fins, followed by cleaning the epitaxial fins using a non-contact-type cleaning device. The dielectric material is then such that the top surface of the dielectric material is lower than top ends of the epitaxial fins. A gate structure is formed across the epitaxial fins.

公开(公告)号：US10461080B2

公开(公告)日：2019-10-29

申请号：US16053990

申请日：2018-08-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shen-Nan Lee ,  Kuo-Yin Lin ,  Pin-Chuan Su ,  Teng-Chun Tsai

IPC: H01L27/088 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/06

Abstract: A method for manufacturing a semiconductor device is provided. In the method for manufacturing a semiconductor device, at first, a semiconductor substrate of a wafer is etched to form at least one fin. Then, an insulation structure is formed around the fin. Thereafter, the fin is recessed. Then, an epitaxial channel structure is epitaxially grown over the recessed fin. Thereafter, a portion of the epitaxial channel structure over a top surface of the insulation structure is removed. Then, a non-contact-type cleaning operation is performed to clean a top surface of the wafer after removing said portion of the epitaxial channel structure. Thereafter, the top surface of the wafer is cleaned using hydrogen fluoride after removing said portion of the epitaxial channel structure. Then, the insulation structure is recessed, such that the epitaxial channel structure protrudes from the recessed insulation structure.