Invention Application
- Patent Title: FABRICATING SEMICONDUCTOR DEVICES, SUCH AS VCSELS, WITH AN OXIDE CONFINEMENT LAYER
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Application No.: US17303050Application Date: 2021-05-19
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Publication No.: US20220376476A1Publication Date: 2022-11-24
- Inventor: Yuri Berk , Vladimir Iakovlev , Anders Larsson , Itshak Kalifa , Matan Galanty , Isabelle Cestier , Elad Mentovich
- Applicant: Mellanox Technologies, Ltd.
- Applicant Address: IL Yokneam
- Assignee: Mellanox Technologies, Ltd.
- Current Assignee: Mellanox Technologies, Ltd.
- Current Assignee Address: IL Yokneam
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/343 ; H01S5/34

Abstract:
Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.
Public/Granted literature
- US2664882A Spinal massage apparatus Public/Granted day:1954-01-05
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