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公开(公告)号：US20240288639A1
公开(公告)日：2024-08-29
申请号：US18119630
申请日：2023-03-09
Applicant: Mellanox Technologies, Ltd.
Inventor： Roy Rudnick , Elad Mentovich , Isabelle Cestier , Ran Hasson Ruso , Dimitrios Kalavrouziotis , Anna Sandomirsky , Vladimir Iakovlev
IPC: G02B6/42
CPC classification number: G02B6/4237 , G02B6/4214 , G02B6/4243 , G02B6/4244
Abstract: Multiple methods are provided for fiber optic welding on a photonic integrated circuit (PIC). An example method includes providing a PIC, forming an attachment surface on the PIC configured to receive an optical fiber. The method further includes disposing at least a portion of the optical fiber on the attachment surface. The method may then include welding the optical fiber to secure the optical fiber with respect to the attachment surface. The attachment surface may be comprised of substantially the same material as an outer portion of the optical fiber and may result in a homogenous weld securing and connecting the optical fiber to the PIC.
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公开(公告)号：US20240380184A1
公开(公告)日：2024-11-14
申请号：US18144984
申请日：2023-05-09
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Isabelle Cestier , Elad Mentovich
Abstract: Some embodiments of the present invention are directed to a tunnel junction for a vertical-cavity surface-emitting laser (VCSEL) that controls optical and current confinement within the VCSEL. The tunnel junction may define an electrical current injection area and an optical aperture for the VCSEL and may include a heavily p++ doped p-type material and a heavily n++ doped n-type material disposed on the p-type material. At least a portion of the outer edges of the n-type material are etched such that the n-type material has a cross-sectional area that is less than a cross-sectional area of the p-type material. By removing a portion of n-type material near the outer edge of the tunnel junction, a sloped effective refractive index is formed, and an effective area of the tunnel junction is changed, which increases the overlap of the current density and the optical field of the VCSEL.
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公开(公告)号：US11769989B2
公开(公告)日：2023-09-26
申请号：US17249224
申请日：2021-02-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Isabelle Cestier , Elad Mentovich
CPC classification number: H01S5/34306 , H01S5/021 , H01S5/18308 , H01S5/18366 , H01S5/2086 , H01S5/3095 , H01S5/068 , H01S5/18344 , H01S5/3416 , H01S5/34313 , H01S5/34366
Abstract: VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.
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公开(公告)号：US20240364080A1
公开(公告)日：2024-10-31
申请号：US18140028
申请日：2023-04-27
Applicant: Mellanox Technologies, Ltd.
Inventor： Filip Leonard Hjort , Anders Gösta Larsson , Isabelle Cestier , Elad Mentovich
IPC: H01S5/183
CPC classification number: H01S5/18311 , H01S5/18375
Abstract: Some embodiments of the present invention are directed to a multi-layer oxide aperture for a VCSEL. The oxide aperture may include multiple layers having different aluminum fractions that may reduce a spectral width of the VCSEL while maintaining longitudinal confinement. The oxide aperture may be formed from a mirror layer of the VCSEL proximate an active region. The mirror layer may include first epitaxial layers closest to the active region having a first aluminum fraction selected to longitudinally confine the optical field of the VCSEL. The mirror layer may include second epitaxial layers that have a second aluminum fraction low enough to prevent substantial oxidation of the second epitaxial layers. Additionally, the mirror layer may include third epitaxial layers that have a third aluminum fraction greater than the first and second aluminum fractions. The third epitaxial layers may be oxidized to form the oxide aperture.
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公开(公告)号：US20220271499A1
公开(公告)日：2022-08-25
申请号：US17249224
申请日：2021-02-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Isabelle Cestier , Elad Mentovich
Abstract: VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.
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Patent Agency Ranking
公开(公告)号：US20200381897A1
公开(公告)日：2020-12-03
申请号：US16890149
申请日：2020-06-02
Applicant: Mellanox Technologies, Ltd.
Inventor： Isabelle Cestier , Itshak Kalifa , Elad Mentovich , Matan Galanty
Abstract: A vertical-cavity surface-emitting laser (VCSEL) and method of fabrication thereof is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector stack, a second reflector stack, and an active region disposed between the first and second reflector stacks. The active region is configured to cause the VCSEL to emit light having a characteristic wavelength of 910 nanometers. The active region includes alternating layers of quantum wells and barriers, the quantum wells having high indium content (up to 18%). The VCSEL features a first contact layer disposed at least partially on a surface of the mesa structure and configured to serve as an electrical signal layer and a second contact layer disposed at least partially about the mesa structure and configured to serve as an electrical ground.
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7.发明公开公开(公告)号：US20240364077A1
公开(公告)日：2024-10-31
申请号：US18140034
申请日：2023-04-27
Applicant: Mellanox Technologies, Ltd.
Inventor： Filip Leonard Hjort , Anders Gösta Larsson , Isabelle Cestier , Elad Mentovich
CPC classification number: H01S5/0654 , H01S5/18313
Abstract: Some embodiments of the present invention are directed to a mode-filtered VCSEL having a multi-layer oxide aperture for high-bandwidth and side-mode suppression. The oxide aperture may include multiple layers having different aluminum fractions configured to increase an SMSR of the VCSEL while maintaining longitudinal confinement. The oxide aperture may be formed from a mirror layer of the VCSEL proximate an active region. The mirror layer may include first epitaxial layers closest to the active region having a first aluminum fraction selected to longitudinally confine the optical field of the VCSEL. The mirror layer may include second epitaxial layers having a second aluminum fraction low enough to prevent substantial oxidation of the second epitaxial layers. Additionally, the mirror layer may include third epitaxial layers having a third aluminum fraction greater than the first and second aluminum fractions. The third epitaxial layers may be oxidized to form the oxide aperture.
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公开(公告)号：US20240039711A1
公开(公告)日：2024-02-01
申请号：US17878464
申请日：2022-08-01
Applicant: Mellanox Technologies, Ltd.
Inventor： Tali Septon , Elad Mentovich , Yonatan Piasetzky , Moshe B. Oron , Isabelle Cestier
CPC classification number: H04L9/0855 , H04B10/70
Abstract: Bi-directional quantum interconnects are provided that include a first communication module and a second communication module. The first communication module includes a first quantum transmitter and a first quantum receiver, and the second communication module includes a second quantum transmitter and a second quantum receiver. The example interconnect further includes a first communication medium communicably coupling the first communication module and the second communication module such that communication is provided between the first quantum transmitter and the second quantum receiver and between the second quantum transmitter and the first quantum receiver via the first communication medium. The first quantum transmitter and the second quantum transmitter generate qubits having first and second quantum characteristics, respectively, to allow for bi-directional quantum communication over a common channel.
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公开(公告)号：US20210126431A1
公开(公告)日：2021-04-29
申请号：US16665435
申请日：2019-10-28
Applicant: Mellanox Technologies, Ltd.
Inventor： Eran Aharon , Itshak Kalifa , Elad Mentovich , Matan Galanty , Isabelle Cestier
IPC: H01S5/183 , H01S5/06 , H01L41/113 , H01S5/42 , H01S5/40
Abstract: A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to be modified from a nominal wavelength of the VCSEL.
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10.发明授权公开(公告)号：US10522977B1
公开(公告)日：2019-12-31
申请号：US16179244
申请日：2018-11-02
Applicant: Mellanox Technologies, Ltd.
Inventor： Elad Mentovich , Itshak Kalifa , Sylvie Rockman , Eyal Waldman , Alon Webman , Isabelle Cestier
Abstract: An electro-optical link is provided. In an example embodiment, the electro-optical link includes a number of vertical cavity surface emitting lasers (VCSELs); one or more drivers that operate the VCSELs such that each of the VCSELs selectively emits an optical signal; one or more multiplexers that multiplex a number of optical signals into an optical fiber, each optical signal emitted by one of the VCSELs; and one or more optical fibers. At least two optical signals are multiplexed into each optical fiber of the one or more optical fibers. In some example configurations eight or sixteen optical signals are multiplexed into one optical fiber.
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