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公开(公告)号：US11611195B2
公开(公告)日：2023-03-21
申请号：US17138623
申请日：2020-12-30
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa
Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.
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公开(公告)号：US20220376476A1
公开(公告)日：2022-11-24
申请号：US17303050
申请日：2021-05-19
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Anders Larsson , Itshak Kalifa , Matan Galanty , Isabelle Cestier , Elad Mentovich
Abstract: Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.
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公开(公告)号：US20240136795A1
公开(公告)日：2024-04-25
申请号：US18211710
申请日：2023-06-19
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir lakovlev , Tamir Sharkaz , Elad Mentovich
CPC classification number: H01S5/18347 , H01S5/18311 , H01S5/18377 , H01S5/2275 , H01S5/3095 , H01S5/3401 , H01S5/423
Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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公开(公告)号：US11588299B2
公开(公告)日：2023-02-21
申请号：US16841824
申请日：2020-04-07
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Elad Mentovich , Tamir Sharkaz
IPC: H01S5/18 , H01S5/183 , H01S5/042 , H01S5/30 , H01S5/00 , H01S5/20 , H01S5/02 , H01S5/343 , H01L21/18 , H01L21/02 , H01L21/306 , H01L21/283 , H01L21/32
Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.
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公开(公告)号：US20220246781A1
公开(公告)日：2022-08-04
申请号：US17249140
申请日：2021-02-22
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich , Matan Galanty , Itshak Kalifa , Paraskevas Bakopoulos
IPC: H01L31/105 , H01L31/0304
Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.
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Patent Agency Ranking
公开(公告)号：US11721952B2
公开(公告)日：2023-08-08
申请号：US16828764
申请日：2020-03-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Itshak Kalifa , Elad Mentovich , Vladimir Iakovlev , Yuri Berk , Tamir Sharkaz
CPC classification number: H01S5/18322 , H01S5/021 , H01S5/0217 , H01S5/0218 , H01S5/02461 , H01S5/1838 , H01S5/18311 , H01S5/18358 , H01S5/18363 , H01S5/3095 , H01S5/34306 , H01S5/34353 , H01S5/04257
Abstract: A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.
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公开(公告)号：US20210336418A1
公开(公告)日：2021-10-28
申请号：US16989907
申请日：2020-08-11
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Vladimir Iakovlev , Yuri Berk , Paraskevas Bakopoulos , Elad Mentovich
Abstract: An optoelectronic device includes a substrate and first thin film layers disposed on the substrate and patterned to define a vertical-cavity surface-emitting laser (VCSEL), which is configured to emit optical radiation along an optical axis perpendicular to the substrate. Second thin film layers are disposed over the first thin film layers and are patterned to define an optical modulator in which the optical radiation propagates in a direction parallel to the substrate, and an optical coupler configured to couple the optical radiation from the VCSEL into the optical modulator.
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公开(公告)号：US20210305783A1
公开(公告)日：2021-09-30
申请号：US16828764
申请日：2020-03-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Itshak Kalifa , Elad Mentovich , Vladimir Iakovlev , Yuri Berk , Tamir Sharkaz
Abstract: A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.
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公开(公告)号：US10601201B1
公开(公告)日：2020-03-24
申请号：US16288847
申请日：2019-02-28
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Sylvie Rockman , Elad Mentovich
Abstract: A vertical cavity surface emitting laser (VCSEL) array is provided. Each tunable VCSEL includes an output coupling mirror; a high reflectivity mirror; an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror; and a spacer layer disposed between the output coupling mirror and the active cavity material. A tuning cavity is defined within the spacer layer. Each VCSEL further includes a first contact pad and a second contact pad designed to receive a driving voltage; a tuning electrode on a first surface of the output coupling mirror for tuning the emission wavelength to a distinct wavelength.
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公开(公告)号：US20190312413A1
公开(公告)日：2019-10-10
申请号：US15944955
申请日：2018-04-04
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Elad Mentovich
Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.
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