Invention Application
- Patent Title: SELECTIVELY BIASING MAGNETORESISTIVE RANDOM-ACCESS MEMORY CELLS
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Application No.: US17331008Application Date: 2021-05-26
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Publication No.: US20220383921A1Publication Date: 2022-12-01
- Inventor: Michael Rizzolo , Saba Zare , Virat Vasav Mehta , Eric Raymond Evarts
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/12 ; H01L43/10 ; H01L43/02 ; H01L43/08 ; H01L27/22
Abstract:
Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below the diffusion barrier, and a magnetic liner arranged around the bottom contact.
Public/Granted literature
- US11942126B2 Selectively biasing magnetoresistive random-access memory cells Public/Granted day:2024-03-26
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