Invention Application
- Patent Title: VOLTAGE BIN SELECTION FOR BLOCKS OF A MEMORY DEVICE AFTER POWER UP OF THE MEMORY DEVICE
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Application No.: US17883538Application Date: 2022-08-08
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Publication No.: US20220383955A1Publication Date: 2022-12-01
- Inventor: Kishore Kumar MUCHHERLA , Sampath K. RATNAM , Shane NOWELL , Sivagnanam PARTHASARATHY , Mustafa N. KAYNAK , Karl D. SCHUH , Peter FEELEY , Jiangang WU
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/20 ; G11C16/32 ; G11C16/30 ; G11C16/26 ; G11C16/34
Abstract:
A processing device of a memory sub-system is configured to detect a power on event that is associated with a memory device and indicates that power has been restored to the memory device; estimate a duration of a power off state preceding the power on event associated with the memory device; and update voltage bin assignments of a plurality of blocks associated with the memory device based on the duration of the power off state.
Public/Granted literature
- US11676664B2 Voltage bin selection for blocks of a memory device after power up of the memory device Public/Granted day:2023-06-13
Information query
