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公开(公告)号:US20200264984A1
公开(公告)日:2020-08-20
申请号:US16559031
申请日:2019-09-03
Applicant: Micron Technology, Inc.
Inventor: Lyle E. ADAMS , Sheng BI , Karl D. SCHUH , Pushpa SEETAMRAJU , Dan Z. TUPY , Yongcai XU
IPC: G06F12/1009
Abstract: An entry is read from a first memory component, the entry associated with a first logical address. The first entry includes a first physical address to a segment of a logical-to-physical address map in a second memory component and an indication of whether the segment of the logical-to-physical address map is stored in the first memory component. The segment of the logical-to-physical address map includes a second entry associated with the first logical address. A second physical address is written to the second entry in the first memory component based on a determination from the indication that the segment of the logical-to-physical address map is stored in the first memory component.
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公开(公告)号:US20220383955A1
公开(公告)日:2022-12-01
申请号:US17883538
申请日:2022-08-08
Applicant: Micron Technology, Inc.
Inventor: Kishore Kumar MUCHHERLA , Sampath K. RATNAM , Shane NOWELL , Sivagnanam PARTHASARATHY , Mustafa N. KAYNAK , Karl D. SCHUH , Peter FEELEY , Jiangang WU
Abstract: A processing device of a memory sub-system is configured to detect a power on event that is associated with a memory device and indicates that power has been restored to the memory device; estimate a duration of a power off state preceding the power on event associated with the memory device; and update voltage bin assignments of a plurality of blocks associated with the memory device based on the duration of the power off state.
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