- 专利标题： Self-Aligned Double Patterning
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申请号： US17883930申请日： 2022-08-09
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公开(公告)号： US20220384201A1公开(公告)日： 2022-12-01
- 发明人: Kuan-Wei Huang , Yu-Yu Chen , Jyu-Horng Shieh
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/768 ; H01L21/311
摘要：
A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer layer over the first mandrels is greater than a thickness of the spacer layer over the second mandrels. Spacers are formed from the spacer layer which have a greater width adjacent the first mandrels than the spacers which are adjacent the second mandrels. The spacers are used to etch a target layer.
公开/授权文献
- US11784056B2 Self-aligned double patterning 公开/授权日：2023-10-10
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