Invention Publication
- Patent Title: MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING
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Application No.: US17526646Application Date: 2021-11-15
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Publication No.: US20230154513A1Publication Date: 2023-05-18
- Inventor: Pouya Hashemi , Jonathan Zanhong Sun , Guohan Hu , Saba Zare
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L43/02 ; H01F10/32 ; H01L27/22

Abstract:
A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.
Public/Granted literature
- US11972785B2 MRAM structure with enhanced magnetics using seed engineering Public/Granted day:2024-04-30
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