Invention Publication
- Patent Title: METHODS FOR FORMING WORK FUNCTION MODULATING LAYERS
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Application No.: US17541582Application Date: 2021-12-03
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Publication No.: US20230178375A1Publication Date: 2023-06-08
- Inventor: Kunal Bhatnagar , Wei Liu , Shashank Sharma , Archana Kumar , Mohith Verghese , Jose Alexandro Romero
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/49 ; H01L29/40 ; H01L21/285 ; H01L21/3215

Abstract:
Method of forming film stacks and film stacks for electronic devices are described herein. The methods comprise depositing a molybdenum nucleation layer on a gate oxide layer; depositing a molybdenum layer on the molybdenum nucleation layer; and performing a plasma nitridation process to insert nitrogen atoms into the molybdenum layer to form a work function modulating layer having an effective work function ≤ 4.5 eV. The plasma nitridation process comprises exposing the molybdenum layer to a radical-rich plasma comprising one or more of N2 or NH3. Some methods further comprise one or more of annealing the work function modulating layer, depositing a conductive layer on the work function modulating layer, or performing an etch process.
Information query
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