Invention Publication
- Patent Title: DIFFUSED TIP EXTENSION TRANSISTOR
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Application No.: US18134418Application Date: 2023-04-13
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Publication No.: US20230253499A1Publication Date: 2023-08-10
- Inventor: Pratik A. PATEL , Mark Y. LIU , Jami A. WIEDEMER , Paul A. PACKAN
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/225 ; H01L21/324 ; H01L29/08 ; H01L29/24 ; H01L29/267
Abstract:
A method including forming an opening in a junction region of a fin on and extending from a substrate; introducing a doped semiconductor material in the opening; and thermal processing the doped semiconductor material. A method including forming a gate electrode on a fin extending from a substrate; forming openings in the fin adjacent opposite sides of the gate electrode; introducing a doped semiconductor material in the openings; and thermally processing the doped semiconductor material sufficient to induce the diffusion of a dopant in the doped semiconductor material. An apparatus including a gate electrode transversing a fin extending from a substrate; and semiconductor material filled openings in junction regions of the fin adjacent opposite sides of the gate electrode, wherein the semiconductor material comprises a dopant.
Information query
IPC分类:
