- 专利标题： METHOD FOR PRODUCING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE OF POLYCRYSTALLINE SIC
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申请号： US17756615申请日： 2020-10-26
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公开(公告)号： US20230260841A1公开(公告)日： 2023-08-17
- 发明人: Ionut Radu , Hugo Biard , Christophe Maleville , Eric Guiot , Didier Landru
- 申请人： Soitec
- 申请人地址： FR Bernin
- 专利权人： Soitec
- 当前专利权人： Soitec
- 当前专利权人地址： FR Bernin
- 优先权： FR 1913553 2019.11.29
- 国际申请： PCT/FR2020/051928 2020.10.26
- 进入国家日期： 2022-05-27
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/02 ; C30B29/36 ; C30B25/20 ; C30B31/22 ; C30B33/10 ; C23C16/32
摘要：
A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.
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