公开(公告)号：US20210193853A1

公开(公告)日：2021-06-24

申请号：US16074342

申请日：2017-01-27

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Eric Guiot ,  Aurelie Tauzin ,  Thomas Signamarcheix ,  Emmanuelle Lagoutte

IPC: H01L31/043 ,  H01L31/054 ,  H01L31/18 ,  H01L31/0725

Abstract: An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.

公开(公告)号：US10361326B2

公开(公告)日：2019-07-23

申请号：US14780473

申请日：2014-03-26

Applicant: Soitec

Inventor： Cécile Aulnette ,  Rainer Krause ,  Frank Dimroth ,  Eric Guiot ,  Eric Mazaleyrat ,  Charlotte Drazek

IPC: H01L31/0443 ,  H01L31/028 ,  H01L31/0693 ,  H01L31/054 ,  H01L31/0687 ,  H01L27/142 ,  H01L31/052

Abstract: This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

公开(公告)号：US20160043254A1

公开(公告)日：2016-02-11

申请号：US14780409

申请日：2014-03-26

Applicant: SOITEC ,  FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Inventor： Rainer Krause ,  Cecile Aulnette ,  Eric Mazaleyrat ,  Frank Dimroth ,  Eric Guiot

IPC: H01L31/047 ,  H01L31/0304 ,  H01L31/02 ,  H01L31/028 ,  H01L31/18 ,  H01L31/024

CPC classification number: H01L33/0079 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76275 ,  H01L31/02008 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/047 ,  H01L31/1876 ,  H01L31/1892 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/54426 ,  Y02E10/50 ,  Y02P70/521

Abstract: This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

Abstract translation: 本公开涉及多个光伏电池的制造方法，包括以下步骤：获得彼此相距第一距离的多个光伏电池; 将拉伸材料附接到所述多个光伏电池; 以及拉伸所述拉伸材料使得所述多个光伏电池彼此之间产生第二距离，其中所述第二距离大于所述第一距离。

公开(公告)号：US20230411151A1

公开(公告)日：2023-12-21

申请号：US18245139

申请日：2021-10-04

Applicant: Soitec

Inventor： Eric Guiot

IPC: H01L21/02 ,  C30B29/40 ,  C30B29/36 ,  H01L29/66 ,  H01L21/683 ,  C30B31/22

CPC classification number: H01L21/02293 ,  C30B29/406 ,  C30B29/36 ,  H01L21/0254 ,  H01L29/66462 ,  H01L21/02447 ,  H01L21/02513 ,  H01L21/6835 ,  C30B31/22 ,  H01L21/02167 ,  H01L2221/68363

Abstract: A method of fabricating a substrate for epitaxial growth of a layer of gallium nitride (GaN), aluminum gallium nitride (AlGaN) or indium gallium nitride (InGaN), comprises the following successive steps:



providing a base substrate comprising at least one layer of single-crystal silicon carbide,
performing epitaxial growth of a layer of semi-insulating SiC having a thickness larger than 1 μm on the layer of single-crystal SiC to form a donor substrate,
implanting ionic species into the layer of semi-insulating SiC so as to form a weakened region defining a thin layer of single-crystal semi-insulating SiC to be transferred,
bonding the layer of semi-insulating SiC directly to a receiver substrate having a high electrical resistivity, and
detaching the donor substrate along the weakened region so as to transfer the thin layer of single-crystal semi-insulating SiC to the receiver substrate.

公开(公告)号：US20230374701A1

公开(公告)日：2023-11-23

申请号：US18247859

申请日：2021-10-04

Applicant: Soitec

Inventor： Eric Guiot

IPC: C30B29/40 ,  C30B25/20

CPC classification number: C30B29/406 ,  C30B25/205

Abstract: A method for producing a substrate for the epitaxial growth of a gallium-based III-N alloy layer comprises the following successive steps: —providing a donor substrate of single-crystal silicon carbide; —implanting ions in the donor substrate to form an embrittlement zone defining a thin film layer of single-crystal SiC; —bonding the donor substrate onto a first receiving substrate via a bonding layer; —detaching the donor substrate along the embrittlement zone to transfer the thin film of SiC onto the first receiving substrate; —epitaxially growing a layer of semi-insulating SiC having a thickness greater than 1 μm on the thin film of SiC; —bonding the layer of semi-insulating SiC onto a second receiving substrate having a high electrical resistivity; —removing at least a portion of the bonding layer to detach the first receiving substrate; and —removing the transferred thin film of single-crystal SiC, to expose the semi-insulating SiC layer.

公开(公告)号：US09954139B2

公开(公告)日：2018-04-24

申请号：US14780409

申请日：2014-03-26

Applicant: Soitec ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.

Inventor： Rainer Krause ,  Cecile Aulnette ,  Eric Mazaleyrat ,  Frank Dimroth ,  Eric Guiot

IPC: H01L33/00 ,  H01L21/67 ,  H01L21/683 ,  H01L31/18 ,  H01L31/02 ,  H01L31/028 ,  H01L21/762 ,  H01L31/047 ,  H01L31/024 ,  H01L31/0304

CPC classification number: H01L33/0079 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76275 ,  H01L31/02008 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/047 ,  H01L31/1876 ,  H01L31/1892 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/54426 ,  Y02E10/50 ,  Y02P70/521

Abstract: This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

公开(公告)号：US12270123B2

公开(公告)日：2025-04-08

申请号：US18247859

申请日：2021-10-04

Applicant: Soitec

Inventor： Eric Guiot

IPC: C30B25/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/762

Abstract: A method for producing a substrate for the epitaxial growth of a gallium-based III-N alloy layer comprises the following successive steps: —providing a donor substrate of single-crystal silicon carbide; —implanting ions in the donor substrate to form an embrittlement zone defining a thin film layer of single-crystal SiC; —bonding the donor substrate onto a first receiving substrate via a bonding layer; —detaching the donor substrate along the embrittlement zone to transfer the thin film of SiC onto the first receiving substrate; —epitaxially growing a layer of semi-insulating SiC having a thickness greater than 1 μm on the thin film of SiC; —bonding the layer of semi-insulating SiC onto a second receiving substrate having a high electrical resistivity; —removing at least a portion of the bonding layer to detach the first receiving substrate; and —removing the transferred thin film of single-crystal SiC, to expose the semi-insulating SiC layer.

公开(公告)号：US20230260841A1

公开(公告)日：2023-08-17

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/32

CPC classification number: H01L21/7813 ,  H01L21/02079 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02628 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/325

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US20160056318A1

公开(公告)日：2016-02-25

申请号：US14780473

申请日：2014-03-26

Applicant: SOITEC ,  FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Inventor： Cecile Aulnette ,  Rainer Krause ,  Frank Dimroth ,  Matthias Grave ,  Eric Guiot ,  Eric Mazaleyrat ,  Charlotte Drazek

IPC: H01L31/0443 ,  H01L31/028 ,  H01L31/0693 ,  H01L31/054 ,  H01L31/0687

CPC classification number: H01L31/0443 ,  H01L27/1421 ,  H01L31/052 ,  H01L31/0687 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

Abstract: This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell structure (3420), comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

Abstract translation: 本公开涉及一种用于支撑聚光器光伏电池结构（3420）的太阳能电池组件结构，其包括半导体结构和二极管，其中所述半导体结构包括第一半导体区域，其至少一部分用于将集中器光伏电池结构 以及用于在第二半导体区域内或其上实现二极管的第二半导体区域，并且其中用于放置集中器光伏电池结构和第二半导体区域的第一半导体区域的部分不是垂直重叠的。

公开(公告)号：US20250063784A1

公开(公告)日：2025-02-20

申请号：US18718313

申请日：2022-12-13

Applicant: Soitec

Inventor： Hugo Biard ,  Eric Guiot

IPC: H01L29/16 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor structure, which includes a support substrate of polycrystalline silicon carbide and an active layer of single-crystal silicon carbide, involves: the formation of a support substrate including a stack of a first layer of polycrystalline SiC mainly of polytype 3C and of a second layer of polycrystalline SiC mainly of polytype 4H and/or 6H, the bonding of a donor substrate including an active layer of single-crystal SiC of polytype 4H or 6H to a face of polytype 4H and/or 6H of the support substrate, and the transfer of the active layer onto the support substrate.