公开(公告)号：US20230411140A1

公开(公告)日：2023-12-21

申请号：US18248169

申请日：2021-10-04

申请人： Soitec

发明人： Eric Guiot

IPC分类号： H01L21/02 ,  H01L29/66 ,  C30B31/22 ,  C30B29/36 ,  C30B29/40 ,  C30B25/18

CPC分类号： H01L21/02002 ,  H01L29/66462 ,  H01L21/0254 ,  H01L21/02378 ,  C30B31/22 ,  C30B29/36 ,  C30B29/406 ,  C30B25/186

摘要： A method of producing a substrate for epitaxial growth of a gallium-based III-N alloy layer comprises the following consecutive steps: —providing a donor substrate of semi-insulating monocrystalline silicon carbide, —implanting ionic species in the donor substrate so as to form a zone of weakness defining a thin layer of semi-insulating monocrystalline SiC to be transferred, —bonding the donor substrate to a first receiving substrate by means of a bonding layer, —detaching the donor substrate along the zone of weakness so as to transfer the thin layer of semi-insulating monocrystalline SiC on to the first receiving substrate, —forming an additional layer of semi-insulating SiC on the transferred thin layer, —bonding the additional layer to a second receiving substrate having a high electrical resistivity, —removing at least a portion of the bonding layer so as to detach the first receiving substrate and expose the layer of transferred semi-insulating monocrystalline SiC.

公开(公告)号：US11251321B2

公开(公告)日：2022-02-15

申请号：US16074342

申请日：2017-01-27

申请人： Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Eric Guiot ,  Aurelie Tauzin ,  Thomas Signamarcheix ,  Emmanuelle Lagoutte

IPC分类号： H01L31/043 ,  H01L31/18 ,  H01L31/0725 ,  H01L31/054 ,  H01L21/18 ,  H01L31/0735

摘要： An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.

公开(公告)号：US09136113B2

公开(公告)日：2015-09-15

申请号：US14044846

申请日：2013-10-02

申请人： SOITEC

发明人： Didier Landru ,  Fabrice Gritti ,  Eric Guiot ,  Oleg Kononchuk ,  Christelle Veytizou

IPC分类号： H01L21/461 ,  H01L21/02 ,  H01L21/316 ,  H01L21/324 ,  H01L21/762

CPC分类号： H01L21/3247 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/31662 ,  H01L21/7624

摘要： A process for avoiding formation of an Si—SiO2—H2 environment during a dissolution treatment of a semiconductor-on-insulator structure that includes a carrier substrate, an oxide layer, a thin layer of a semiconductor material and a peripheral ring in which the oxide layer is exposed. This process includes encapsulating at least the exposed oxide layer of the peripheral ring with semiconductor material by performing a creep thermal treatment; and performing an oxide dissolution treatment to reduce part of the thickness of the oxide layer. In this process, the semiconductor material that encapsulates the oxide layer has a thickness before the oxide dissolution that is at least twice that of the oxide that is to be dissolved, thus avoiding formation of an Si—SiO2—H2 environment on the peripheral ring where the oxide layer would otherwise be exposed.

摘要翻译： 在绝缘体上半导体结构的溶解处理中避免形成Si-SiO 2 -H 2环境的方法，其包括载体衬底，氧化物层，半导体材料的薄层和外围环，其中氧化物 层暴露。 该方法包括通过进行蠕变热处理将至少外围环的暴露的氧化物层与半导体材料封装起来; 并进行氧化物溶解处理以减少氧化物层的厚度的一部分。 在该方法中，封装氧化物层的半导体材料的氧化物溶解前的厚度为要溶解的氧化物的至少两倍，因此避免在外围环上形成Si-SiO 2 -H 2环境， 否则会暴露氧化层。

公开(公告)号：US20210193853A1

公开(公告)日：2021-06-24

申请号：US16074342

申请日：2017-01-27

申请人： Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Eric Guiot ,  Aurelie Tauzin ,  Thomas Signamarcheix ,  Emmanuelle Lagoutte

IPC分类号： H01L31/043 ,  H01L31/054 ,  H01L31/18 ,  H01L31/0725

摘要： An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular, of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 5 mOhm·cm2.

公开(公告)号：US10361326B2

公开(公告)日：2019-07-23

申请号：US14780473

申请日：2014-03-26

申请人： Soitec

发明人： Cécile Aulnette ,  Rainer Krause ,  Frank Dimroth ,  Eric Guiot ,  Eric Mazaleyrat ,  Charlotte Drazek

IPC分类号： H01L31/0443 ,  H01L31/028 ,  H01L31/0693 ,  H01L31/054 ,  H01L31/0687 ,  H01L27/142 ,  H01L31/052

摘要： This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

公开(公告)号：US20160043254A1

公开(公告)日：2016-02-11

申请号：US14780409

申请日：2014-03-26

申请人： SOITEC ,  FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： Rainer Krause ,  Cecile Aulnette ,  Eric Mazaleyrat ,  Frank Dimroth ,  Eric Guiot

IPC分类号： H01L31/047 ,  H01L31/0304 ,  H01L31/02 ,  H01L31/028 ,  H01L31/18 ,  H01L31/024

CPC分类号： H01L33/0079 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76275 ,  H01L31/02008 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/047 ,  H01L31/1876 ,  H01L31/1892 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/54426 ,  Y02E10/50 ,  Y02P70/521

摘要： This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

摘要翻译： 本公开涉及多个光伏电池的制造方法，包括以下步骤：获得彼此相距第一距离的多个光伏电池; 将拉伸材料附接到所述多个光伏电池; 以及拉伸所述拉伸材料使得所述多个光伏电池彼此之间产生第二距离，其中所述第二距离大于所述第一距离。

公开(公告)号：US20230411151A1

公开(公告)日：2023-12-21

申请号：US18245139

申请日：2021-10-04

申请人： Soitec

发明人： Eric Guiot

IPC分类号： H01L21/02 ,  C30B29/40 ,  C30B29/36 ,  H01L29/66 ,  H01L21/683 ,  C30B31/22

CPC分类号： H01L21/02293 ,  C30B29/406 ,  C30B29/36 ,  H01L21/0254 ,  H01L29/66462 ,  H01L21/02447 ,  H01L21/02513 ,  H01L21/6835 ,  C30B31/22 ,  H01L21/02167 ,  H01L2221/68363

摘要： A method of fabricating a substrate for epitaxial growth of a layer of gallium nitride (GaN), aluminum gallium nitride (AlGaN) or indium gallium nitride (InGaN), comprises the following successive steps:



providing a base substrate comprising at least one layer of single-crystal silicon carbide,
performing epitaxial growth of a layer of semi-insulating SiC having a thickness larger than 1 μm on the layer of single-crystal SiC to form a donor substrate,
implanting ionic species into the layer of semi-insulating SiC so as to form a weakened region defining a thin layer of single-crystal semi-insulating SiC to be transferred,
bonding the layer of semi-insulating SiC directly to a receiver substrate having a high electrical resistivity, and
detaching the donor substrate along the weakened region so as to transfer the thin layer of single-crystal semi-insulating SiC to the receiver substrate.

公开(公告)号：US20230374701A1

公开(公告)日：2023-11-23

申请号：US18247859

申请日：2021-10-04

申请人： Soitec

发明人： Eric Guiot

IPC分类号： C30B29/40 ,  C30B25/20

CPC分类号： C30B29/406 ,  C30B25/205

摘要： A method for producing a substrate for the epitaxial growth of a gallium-based III-N alloy layer comprises the following successive steps: —providing a donor substrate of single-crystal silicon carbide; —implanting ions in the donor substrate to form an embrittlement zone defining a thin film layer of single-crystal SiC; —bonding the donor substrate onto a first receiving substrate via a bonding layer; —detaching the donor substrate along the embrittlement zone to transfer the thin film of SiC onto the first receiving substrate; —epitaxially growing a layer of semi-insulating SiC having a thickness greater than 1 μm on the thin film of SiC; —bonding the layer of semi-insulating SiC onto a second receiving substrate having a high electrical resistivity; —removing at least a portion of the bonding layer to detach the first receiving substrate; and —removing the transferred thin film of single-crystal SiC, to expose the semi-insulating SiC layer.

公开(公告)号：US09954139B2

公开(公告)日：2018-04-24

申请号：US14780409

申请日：2014-03-26

申请人： Soitec ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.

发明人： Rainer Krause ,  Cecile Aulnette ,  Eric Mazaleyrat ,  Frank Dimroth ,  Eric Guiot

IPC分类号： H01L33/00 ,  H01L21/67 ,  H01L21/683 ,  H01L31/18 ,  H01L31/02 ,  H01L31/028 ,  H01L21/762 ,  H01L31/047 ,  H01L31/024 ,  H01L31/0304

CPC分类号： H01L33/0079 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76275 ,  H01L31/02008 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/047 ,  H01L31/1876 ,  H01L31/1892 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68386 ,  H01L2223/54426 ,  Y02E10/50 ,  Y02P70/521

摘要： This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.

公开(公告)号：US20230260841A1

公开(公告)日：2023-08-17

申请号：US17756615

申请日：2020-10-26

申请人： Soitec

发明人： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC分类号： H01L21/78 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/32

CPC分类号： H01L21/7813 ,  H01L21/02079 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02628 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/325

摘要： A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.