- 专利标题： MULTIPLE-LAYER METHOD AND SYSTEM FOR FORMING MATERIAL WITHIN A GAP
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申请号： US17953585申请日： 2022-09-27
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公开(公告)号： US20230101229A1公开(公告)日： 2023-03-30
- 发明人: Hannu Huotari , Viljami Pore , Timothee Blanquart , René Henricus Jozef Vervuurt , Charles Dezelah , Giuseppe Alessio Verni , Ren-Jie Chang , Michael Givens , Eric James Shero
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/67 ; H01L21/02
摘要：
A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.
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