- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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申请号： US17886049申请日： 2022-08-11
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公开(公告)号： US20230111142A1公开(公告)日： 2023-04-13
- 发明人: Katsumi EIKYU , Yuta NABUCHI , Atsushi SAKAI , Akihiro SHIMOMURA , Satoru TOKUDA
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2021-167195 20211012
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66
摘要：
A semiconductor device includes a plurality of unit cells. Each of the plurality of unit cells has a pair of column regions, a pair of trenches formed between the pair of column regions in the X direction, and a pair of gate electrodes formed in the pair of trenches via a gate insulating film, respectively. The two unit cells adjacent in the X direction share one column region of the pair of column regions and are arranged to be symmetrical about the shared column region. Here, a distance between the two trenches, which are adjacent with the one column region interposed therebetween, of the trenches in the two adjacent unit cells is different from a distance between the pair of trenches in the one unit cell.
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