Invention Publication
- Patent Title: MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES
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Application No.: US18239193Application Date: 2023-08-29
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Publication No.: US20240071531A1Publication Date: 2024-02-29
- Inventor: Tomoko Ogura Iwasaki , Hong-Yan Chen , Pamela Castalino , Priya Vemparala Guruswamy , Jun Xu , Gianluca Nicosia , Ji-Hye Gale Shin
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/04 ; G11C16/10 ; G11C16/12
Abstract:
A memory device includes an array of memory cells and a controller configured to access the array of memory cells to program a selected memory cell of the array of memory cells to a target level based on a compensation value of a program command. The controller is further configured to sense a threshold voltage of the selected memory cell. The controller is further configured to in response to the compensation value having a first value and the threshold voltage being greater than a first program verify level, inhibit programming of the selected memory cell. The controller is further configured to in response to the compensation value having a second value different from the first value and the threshold voltage being greater than a second program verify level less than the first program verify level, inhibit programming of the selected memory cell.
Information query
