-
公开(公告)号：US20240231642A1
公开(公告)日：2024-07-11
申请号：US18407366
申请日：2024-01-08
Applicant: Micron Technology, Inc.
Inventor： Gianluca Nicosia , Akira Goda , Niccolo Righetti
IPC: G06F3/06
CPC classification number: G06F3/0619 , G06F3/0659 , G06F3/0679
Abstract: A memory sub-system with a memory device having a plurality of cells, and the plurality of cells having a set of cells, and a processing device operatively coupled to the memory device, the processing device to perform operations of determining a level information associated with the set of cells, where the set of cells comprise a target cell associated with a read operation, identifying a read level offset for the target cell based on the level information, and performing the read operation in accordance with the read level offset.
-
公开(公告)号：US20240071531A1
公开(公告)日：2024-02-29
申请号：US18239193
申请日：2023-08-29
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Tomoko Ogura Iwasaki , Hong-Yan Chen , Pamela Castalino , Priya Vemparala Guruswamy , Jun Xu , Gianluca Nicosia , Ji-Hye Gale Shin
CPC classification number: G11C16/3459 , G11C16/0433 , G11C16/102 , G11C16/12
Abstract: A memory device includes an array of memory cells and a controller configured to access the array of memory cells to program a selected memory cell of the array of memory cells to a target level based on a compensation value of a program command. The controller is further configured to sense a threshold voltage of the selected memory cell. The controller is further configured to in response to the compensation value having a first value and the threshold voltage being greater than a first program verify level, inhibit programming of the selected memory cell. The controller is further configured to in response to the compensation value having a second value different from the first value and the threshold voltage being greater than a second program verify level less than the first program verify level, inhibit programming of the selected memory cell.
-
Search Results
2
records
(took 0.011 seconds)
