Invention Publication
- Patent Title: MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME
-
Application No.: US17772972Application Date: 2020-10-27
-
Publication No.: US20240158954A1Publication Date: 2024-05-16
- Inventor: Yuya TSUCHIDA , Yuya SUEMOTO , Yoshihiro UEOKA , Masami MESUDA , Hideto KURAMOCHI , Takahiro NAGATA , Liwen SANG , Toyohiro CHIKYOW
- Applicant: TOSOH CORPORATION , National Institute for Materials Science
- Applicant Address: JP Shunan-Shi
- Assignee: TOSOH CORPORATION,National Institute for Materials Science
- Current Assignee: TOSOH CORPORATION,National Institute for Materials Science
- Current Assignee Address: JP Shunan-Shi; JP Tsukuba-shi
- Priority: JP 19198886 2019.10.31 JP 20140980 2020.08.24
- International Application: PCT/JP2020/040216 2020.10.27
- Date entered country: 2022-04-28
- Main IPC: C30B29/68
- IPC: C30B29/68 ; C23C14/00 ; C23C14/02 ; C23C14/06 ; C23C14/34 ; C23C14/35 ; C30B23/02 ; C30B25/06 ; C30B25/18 ; C30B29/40 ; H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L33/32 ; H01S5/02
Abstract:
The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.
Information query
IPC分类:
