- 专利标题： LOW TEMPERATURE DEPOSITION OF IRIDIUM CONTAINING FILMS
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申请号： US18590141申请日： 2024-02-28
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公开(公告)号： US20240200188A1公开(公告)日： 2024-06-20
- 发明人: Feng Q. Liu , Hua Chung , Schubert Chu , Mei Chang , Jeffrey W. Anthis , David Thompson
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 分案原申请号： US16129232 2018.09.12
- 主分类号： C23C16/42
- IPC分类号： C23C16/42 ; C23C16/14 ; C23C16/455 ; C23C16/507 ; C23C16/513 ; C23C16/52
摘要：
Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.
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