Invention Publication
- Patent Title: THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ARRAY SUBSTRATE
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Application No.: US17996260Application Date: 2021-11-03
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Publication No.: US20240222445A1Publication Date: 2024-07-04
- Inventor: Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Nianqi YAO , Kun ZHAO , Tianmin ZHOU , Liping LEI
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Priority: CN 2110591152.3 2021.05.28
- International Application: PCT/CN2021/128401 2021.11.03
- Date entered country: 2022-10-14
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/786

Abstract:
A thin film transistor, an array substrate and a manufacturing method of the thin film transistor are provided, the thin film transistor includes a base substrate; and a first active layer, a first insulating layer and a second active layer, which are sequentially arranged on the base substrate, the first active layer is in contact with the second active layer through a first via hole structure located in the first insulating layer, and non-contacted portions of the first active layer and the second active layer are separated by the first insulating layer, the thin film transistor has a plurality of active layer structures, so that the charges are gathered on two surfaces of each of the active layers, and the number of the charges gathered on the surfaces of the active layers is multiplied, and the open state current of the thin film transistor is multiplied.
Information query
IPC分类: