公开(公告)号：US20250031447A1

公开(公告)日：2025-01-23

申请号：US18279205

申请日：2022-10-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhengliang LI ,  Guangcai YUAN ,  Ce NING ,  Zhonghao HUANG ,  Zhixiang ZOU ,  Zhangtao WANG ,  Jie HUANG ,  Nianqi YAO ,  Jiayu HE ,  Hehe HU ,  Feifei LI ,  Kun ZHAO ,  Chen XU ,  Hui GUO

IPC: H01L27/12 ,  H01L23/00

Abstract: A display substrate, including: a base substrate; and a metal conductive layer, located at a side of the base substrate, and including a core conductive layer and a functional conductive layer laminated along a direction away from the base substrate; a material of the core conductive layer includes a conductive metal material; a material of the functional conductive layer includes a first diffusion barrier metal material and a first adhesion force enhancing metal material, wherein the first diffusion barrier metal material is configured to block diffusion of the conductive metal material, and the first adhesion force enhancing metal material is configured to enhance an adhesion force between the functional conductive layer and a photoresist used in a patterning process of the functional conductive layer; a surface energy of any of first adhesion force enhancing metal materials is less than or equal to 325 mJ/m2.

公开(公告)号：US20240274674A1

公开(公告)日：2024-08-15

申请号：US18021778

申请日：2022-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Niangi YAO ,  Kun ZHAO ,  Feifei LI

IPC: H01L29/417 ,  H01L29/423

CPC classification number: H01L29/41733 ,  H01L29/42384

Abstract: Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

公开(公告)号：US20240222445A1

公开(公告)日：2024-07-04

申请号：US17996260

申请日：2021-11-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Tianmin ZHOU ,  Liping LEI

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78645

Abstract: A thin film transistor, an array substrate and a manufacturing method of the thin film transistor are provided, the thin film transistor includes a base substrate; and a first active layer, a first insulating layer and a second active layer, which are sequentially arranged on the base substrate, the first active layer is in contact with the second active layer through a first via hole structure located in the first insulating layer, and non-contacted portions of the first active layer and the second active layer are separated by the first insulating layer, the thin film transistor has a plurality of active layer structures, so that the charges are gathered on two surfaces of each of the active layers, and the number of the charges gathered on the surfaces of the active layers is multiplied, and the open state current of the thin film transistor is multiplied.

公开(公告)号：US20230060645A1

公开(公告)日：2023-03-02

申请号：US17800389

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Kun ZHAO ,  Nianqi YAO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49 ,  H01L21/02 ,  H01L21/443 ,  H01L29/66

Abstract: A metal oxide thin film transistor is provided and includes a gate, a gate insulating layer, an active layer and a source-drain metal layer stacked on a side of a backplane, the active layer and the gate are provided on both sides of the gate insulating layer, the source-drain metal layer is provided on a side of the active layer away from the backplane, the active layer includes: a first metal oxide semiconductor layer provided on a side of the gate insulating layer away from the gate; a second metal oxide semiconductor layer provided on a surface of the first metal oxide semiconductor layer away from the gate.

公开(公告)号：US20220278162A1

公开(公告)日：2022-09-01

申请号：US17410677

申请日：2021-08-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO

IPC: H01L27/146 ,  H01L27/12

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20220223773A1

公开(公告)日：2022-07-14

申请号：US17465689

申请日：2021-09-02

Applicant: BOE Technology Group Co., Ltd.

Inventor： Song LIU ,  Zhengliang LI ,  Kun ZHAO ,  Feifei LI ,  Qi QI

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/56

Abstract: Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.

公开(公告)号：US20250098064A1

公开(公告)日：2025-03-20

申请号：US18552754

申请日：2022-10-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Kun ZHAO ,  Ce NING ,  Zhengliang LI ,  Zhanfeng CAO ,  Ke WANG ,  Jiaxiang ZHANG ,  Qi QI ,  Hehe HU ,  Feifei LI ,  Jie HUANG ,  Jiayu HE

IPC: H05K1/02 ,  G02F1/1335 ,  G02F1/13357 ,  H05K1/11 ,  H05K3/28

Abstract: A circuit board includes a substrate, a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer includes a plurality of first conductive portions. The second conductive layer includes a plurality of second conductive portions. A second conductive portion passes through a first via hole in the first insulating layer to be in electrical contact with a first conductive portion. The first conductive layer and the second conductive layer each include at least one main conductive layer, which is capable of creating a first intermetallic compound with solder. At least one of the first conductive layer and the second conductive layer further includes a stop layer capable of creating a second intermetallic compound with the solder. A rate of a reaction between the stop layer and the solder is lower than a rate of a reaction between the main conductive layer and the solder.

公开(公告)号：US20240234532A1

公开(公告)日：2024-07-11

申请号：US17925222

申请日：2021-12-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hehe HU ,  Dongfang WANG ,  Fengjuan LIU ,  Ce NING ,  Zhengliang LI ,  Jiayu HE ,  Yan QU ,  Kun ZHAO ,  Jie HUANG ,  Liping LEI ,  Yunsik IM ,  Shunhang ZHANG ,  Nianqi YAO ,  Feifei LI

IPC: H01L29/43 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/435 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/66742

Abstract: The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

公开(公告)号：US20230036385A1

公开(公告)日：2023-02-02

申请号：US17772689

申请日：2021-06-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Xue LIU ,  Zhi WANG ,  Feng GUAN

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/66

Abstract: The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

公开(公告)号：US20250098212A1

公开(公告)日：2025-03-20

申请号：US18963664

申请日：2024-11-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie HUANG ,  Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Fengjuan LIU ,  Nianqi YAO ,  Kun ZHAO ,  Tianmin ZHOU ,  Jiushi WANG ,  Zhongpeng TIAN

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include at least one of indium, gallium and zinc. Praseodymium is doped into the channel layer. And, in the channel layer, a number density of praseodymium atoms in the channel layer gradually decreases with a distance from the first protection layer.