公开(公告)号：US20240306438A1

公开(公告)日：2024-09-12

申请号：US17924845

申请日：2021-12-29

申请人： BOE Technology Group Co., Ltd.

发明人： Dongfang WANG ,  Wei LIU ,  Jie HUANG

IPC分类号： H10K59/124 ,  H10K59/12

CPC分类号： H10K59/124 ,  H10K59/1201

摘要： Provided are an array substrate and a method for manufacturing the array substrate, a display panel and a display device, belonging to the field of display technologies. The array substrate includes a base substrate and a driving thin-film transistor disposed on the base substrate. The driving thin-film transistor includes a first gate, a first insulating layer, a first active layer, a second insulating layer, and a first source/drain electrode which are sequentially laminated on the base substrate. The thickness of the first insulating layer is greater than the thickness of the second insulating layer. Therefore, the regulating ability of the first gate of the driving thin-film transistor over the first active layer is reduced, and the subthreshold swing of the driving thin-film transistor is increased, thereby improving the adjusting ability of the driving thin-film transistor over the grayscale of the light-emitting device on the display panel.

公开(公告)号：US20240234532A1

公开(公告)日：2024-07-11

申请号：US17925222

申请日：2021-12-27

申请人： BOE Technology Group Co., Ltd.

发明人： Hehe HU ,  Dongfang WANG ,  Fengjuan LIU ,  Ce NING ,  Zhengliang LI ,  Jiayu HE ,  Yan QU ,  Kun ZHAO ,  Jie HUANG ,  Liping LEI ,  Yunsik IM ,  Shunhang ZHANG ,  Nianqi YAO ,  Feifei LI

IPC分类号： H01L29/43 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/435 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/66742

摘要： The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

公开(公告)号：US20230036385A1

公开(公告)日：2023-02-02

申请号：US17772689

申请日：2021-06-24

申请人： BOE Technology Group Co., Ltd.

发明人： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Xue LIU ,  Zhi WANG ,  Feng GUAN

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/66

摘要： The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

公开(公告)号：US20240332425A1

公开(公告)日：2024-10-03

申请号：US18028009

申请日：2022-03-30

申请人： BOE Technology Group Co., Ltd.

发明人： Jiayu HE ,  Fangqing WEN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Zhengliang LI ,  Jie HUANG ,  Feifei LI ,  Yan QU ,  Liping LEI

IPC分类号： H01L29/786 ,  H01L25/07

CPC分类号： H01L29/7869 ,  H01L25/074

摘要： The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

公开(公告)号：US20240304698A1

公开(公告)日：2024-09-12

申请号：US18028114

申请日：2022-03-30

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jiayu HE ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI

IPC分类号： H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

摘要： There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

公开(公告)号：US20240297255A1

公开(公告)日：2024-09-05

申请号：US17919301

申请日：2021-11-29

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

摘要： The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

公开(公告)号：US20220223745A1

公开(公告)日：2022-07-14

申请号：US17761549

申请日：2021-05-18

申请人： BOE Technology Group Co., Ltd.

发明人： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Zhi WANG ,  Feng GUAN

IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L29/06 ,  H01L29/66

摘要： A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

公开(公告)号：US20240355978A1

公开(公告)日：2024-10-24

申请号：US18254210

申请日：2022-04-21

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Nianqi YAO ,  Zhongpeng TIAN ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Jiayu HE ,  Feifei LI ,  Kun ZHAO ,  Yimin CHEN

IPC分类号： H01L33/62 ,  G02F1/13357 ,  H05K3/46

CPC分类号： H01L33/62 ,  G02F1/133603 ,  H05K3/4688

摘要： A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

公开(公告)号：US20240244747A1

公开(公告)日：2024-07-18

申请号：US17927576

申请日：2021-12-31

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Nianqi YAO ,  Feifei LI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Jie HUANG ,  Kun ZHAO ,  Zhanfeng CAO ,  Ke WANG

IPC分类号： H05K1/11 ,  H01L23/498 ,  H01L33/62 ,  H05K1/09 ,  H05K1/18

CPC分类号： H05K1/111 ,  H01L23/49838 ,  H01L33/62 ,  H05K1/09 ,  H05K1/181 ,  H05K2201/0338 ,  H05K2201/10106 ,  H05K2201/10151

摘要： A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.

公开(公告)号：US20240194686A1

公开(公告)日：2024-06-13

申请号：US17908652

申请日：2021-10-25

申请人： BOE Technology Group Co., Ltd.

发明人： Nianqi YAO ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Shuilang DONG ,  Lizhong WANG ,  Dapeng XUE ,  Jiayu HE ,  Jie HUANG ,  Lubin SHI ,  Liping LEI

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1225 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

摘要： Provided is a thin film transistor and a method for manufacturing thereof, a display panel, and a display device, which relates to the field of display technologies. The thin film transistor includes an active layer, source and drain electrodes, and an oxygen supplementation layer. As an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, oxygen introduced in forming the oxygen supplementation layer in the thin film transistor is capable of diffusing to the target portion of the active layer, such that a defect in the target portion of the active layer is reduced, and a property of the thin film transistor is greater.