- 专利标题: SEMICONDUCTOR DEVICE STRUCTURES
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申请号: US18603483申请日: 2024-03-13
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公开(公告)号: US20240249976A1公开(公告)日: 2024-07-25
- 发明人: Hsin-Che Chiang , Jeng-Ya David Yeh , Chung-Sheng Liang , Ju-Li Huang
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US16009519 2018.06.15
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/311 ; H01L23/522 ; H01L23/532 ; H01L29/417
摘要:
In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.
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