Invention Publication
- Patent Title: POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP, AND POLISHING METHOD
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Application No.: US18294859Application Date: 2022-08-03
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Publication No.: US20240336809A1Publication Date: 2024-10-10
- Inventor: Yasushi KURATA , Tomohiro IWANO , Taira ONUMA , Shigeki KUBOTA , Makoto MIZUTANI , Noriaki MURAKAMI , Masahiro KANNO
- Applicant: Resonac Corporation
- Applicant Address: JP Tokyo
- Assignee: Resonac Corporation
- Current Assignee: Resonac Corporation
- Current Assignee Address: JP Tokyo
- Priority: WO TJP2021029409 2021.08.06
- International Application: PCT/JP2022/029843 2022.08.03
- Date entered country: 2024-02-02
- Main IPC: C09G1/02
- IPC: C09G1/02 ; B24B37/04 ; H01L21/3105
Abstract:
A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below and (B) a saturated monocarboxylic acid, and a pH is more than 4.0. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A2) picolinic acid and (B) a saturated monocarboxylic acid, and a pH is more than 4.0.
[in the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]
[in the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent.]
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