- 专利标题: LITHOGRAPHY CONTAMINATION CONTROL
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申请号: US18766165申请日: 2024-07-08
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公开(公告)号: US20240361708A1公开(公告)日: 2024-10-31
- 发明人: Chieh HSIEH , Tai-Yu CHEN , Cho-Ying LIN , Heng-Hsin LIU , Li-Jui CHEN , Shang-Chieh CHIEN
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; G02B17/06 ; H05G2/00
摘要:
A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.
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