公开(公告)号：US20240365461A1

公开(公告)日：2024-10-31

申请号：US18769912

申请日：2024-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Ming-Hsun TSAI ,  Wei-Shin CHENG ,  Cheng-Hao LAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Jou-Hsuan LU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/00 ,  G05D23/19

CPC classification number: H05G2/006 ,  G03F7/70033 ,  G05D23/19

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

公开(公告)号：US20230386884A1

公开(公告)日：2023-11-30

申请号：US18447519

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shuang-Shiuan DENG ,  Fan-Chi LIN ,  Chueh-Chi KUO ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01L21/68721

Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.

公开(公告)号：US20220350257A1

公开(公告)日：2022-11-03

申请号：US17867318

申请日：2022-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/20

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20220338335A1

公开(公告)日：2022-10-20

申请号：US17483298

申请日：2021-09-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Ming-Hsun TSAI ,  Wei-Shin CHENG ,  Cheng-Hao LAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Jou-Hsuan LU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/20

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

公开(公告)号：US20220310431A1

公开(公告)日：2022-09-29

申请号：US17477450

申请日：2021-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Shiuan DENG ,  Fan-Chi LIN ,  Chueh-Chi KUO ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H01L21/683 ,  H01L21/687

Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.

公开(公告)号：US20240377752A1

公开(公告)日：2024-11-14

申请号：US18781567

申请日：2024-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Heng-Hsin LIU ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

IPC: G03F7/00 ,  G21K1/06 ,  H05G2/00

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.

公开(公告)号：US20230367225A1

公开(公告)日：2023-11-16

申请号：US18361254

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/00

CPC classification number: G03F7/70033 ,  G03F7/70166 ,  G03F7/705 ,  G03F7/70916 ,  G03F7/70933

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20230296992A1

公开(公告)日：2023-09-21

申请号：US18324889

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  H05G2/00

CPC classification number: G03F7/7085 ,  H05G2/008 ,  H05G2/005 ,  G03F7/70033 ,  G03F7/70925 ,  G03F7/70916

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US20230189422A1

公开(公告)日：2023-06-15

申请号：US18064858

申请日：2022-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Cheng-Hao LAI ,  Yu-Huan CHEN ,  Wei-Shin CHENG ,  Ming-Hsun TSAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/20

CPC classification number: H05G2/006 ,  G03F7/70033 ,  H05G2/005 ,  H05G2/008

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

公开(公告)号：US20220334472A1

公开(公告)日：2022-10-20

申请号：US17232483

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

IPC: G03F7/00 ,  G03F7/22 ,  G03F7/20 ,  G03F7/36

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.