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    LITHOGRAPHY CONTAMINATION CONTROL
    2.
    发明公开
    LITHOGRAPHY CONTAMINATION CONTROL 审中-公开

    公开(公告)号：US20240361708A1

    公开(公告)日：2024-10-31

    申请号：US18766165

    申请日：2024-07-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Heng-Hsin LIU ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

    IPC: G03F7/00 ,  G02B17/06 ,  H05G2/00

    CPC classification number: G03F7/70925 ,  G02B17/0663 ,  G03F7/70033 ,  G03F7/70491 ,  G03F7/70808 ,  G03F7/70916 ,  H05G2/008

    Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

    LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS
    4.
    发明申请
    LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS 审中-公开

    公开(公告)号：US20200068696A1

    公开(公告)日：2020-02-27

    申请号：US16671347

    申请日：2019-11-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Chun-Chia HSU ,  Bo-Tsun LIU ,  Tzung-CHI FU ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: H05G2/00 ,  G03F7/20

    Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value, wherein the parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

    RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS
    9.
    发明申请
    RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS 审中-公开

    公开(公告)号：US20200033732A1

    公开(公告)日：2020-01-30

    申请号：US16124357

    申请日：2018-09-07

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: G03F7/20

    Abstract: A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.

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