Invention Application
- Patent Title: DISPLAY DEVICE AND SEMICONDUCTOR DEVICE
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Application No.: US18798914Application Date: 2024-08-09
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Publication No.: US20240402552A1Publication Date: 2024-12-05
- Inventor: Toshihide JINNAI , Hajime WATAKABE , Akihiro HANADA , Ryo ONODERA , lsao SUZUMURA
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Priority: JP2019-027237 20190219
- Main IPC: G02F1/1362
- IPC: G02F1/1362 ; G02F1/1368 ; H01L27/12 ; H01L29/786 ; H10K59/131

Abstract:
A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor is covered by a first insulating film, a first drain electrode is connected to the oxide semiconductor via a first through hole formed in the first insulating film, a first source electrode is connected to the oxide semiconductor via second through hole formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode and the first source electrode, a drain wiring connects to the first drain electrode via a third through hole formed in the second insulating film, a source wiring is connected to the first source electrode via a fourth through hole formed in the second insulating film.
Information query
IPC分类: