公开(公告)号：US20210134848A1

公开(公告)日：2021-05-06

申请号：US17148653

申请日：2021-01-14

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor including a channel region, a drain region, and a source region; a gate insulating film formed on the channel region; an aluminum oxide film formed on the gate insulating film; and a gate electrode formed on the aluminum oxide film, wherein the aluminum oxide film has a region that covers neither the drain region nor the source region in a plane view.

公开(公告)号：US20240402552A1

公开(公告)日：2024-12-05

申请号：US18798914

申请日：2024-08-09

Applicant: Japan Display Inc.

Inventor： Toshihide JINNAI ,  Hajime WATAKABE ,  Akihiro HANADA ,  Ryo ONODERA ,  lsao SUZUMURA

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor is covered by a first insulating film, a first drain electrode is connected to the oxide semiconductor via a first through hole formed in the first insulating film, a first source electrode is connected to the oxide semiconductor via second through hole formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode and the first source electrode, a drain wiring connects to the first drain electrode via a third through hole formed in the second insulating film, a source wiring is connected to the first source electrode via a fourth through hole formed in the second insulating film.

公开(公告)号：US20240038768A1

公开(公告)日：2024-02-01

申请号：US18487263

申请日：2023-10-16

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor including a channel region, a drain region, and a source region; a gate insulating film formed on the channel region; an aluminum oxide film formed on the gate insulating film; and a gate electrode formed on the aluminum oxide film, wherein the aluminum oxide film has a region that covers neither the drain region nor the source region in a plane view.

公开(公告)号：US20220278137A1

公开(公告)日：2022-09-01

申请号：US17747049

申请日：2022-05-18

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20210405411A1

公开(公告)日：2021-12-30

申请号：US17471881

申请日：2021-09-10

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20210066351A1

公开(公告)日：2021-03-04

申请号：US16986462

申请日：2020-08-06

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20240369891A1

公开(公告)日：2024-11-07

申请号：US18777958

申请日：2024-07-19

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20230185144A1

公开(公告)日：2023-06-15

申请号：US18164809

申请日：2023-02-06

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20210320158A1

公开(公告)日：2021-10-14

申请号：US17304569

申请日：2021-06-23

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: H01L27/32 ,  G02F1/1333

Abstract: The purpose of the present invention is to increase ON current of the oxide semiconductor thin film transistor. An example of the structure that attains the purpose is: a display device having a substrate and a thin film transistor of an oxide semiconductor formed on the substrate including: a thickness of a source region and a drain region is thicker than a thickness of a channel region of the oxide semiconductor, the channel region has projections at portions contacting the source region and the drain region, a thickness of the projection is thicker than a thickness of the center of the channel region, and a thickness of the projection is thicker than a thickness of the source region and the drain region.

公开(公告)号：US20200259020A1

公开(公告)日：2020-08-13

申请号：US16785662

申请日：2020-02-10

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.