Invention Application
- Patent Title: VOLTAGE SCALING BASED ON ERROR RATE
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Application No.: US18773178Application Date: 2024-07-15
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Publication No.: US20250028373A1Publication Date: 2025-01-23
- Inventor: Leon Zlotnik , Eyal En Gad , Leonid Minz , Sivagnanam Parthasarathy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F11/10

Abstract:
A method includes generating, by circuitry resident on a memory device, parity information, appending parity information to data read from the memory device to generate a bit string comprising the data read from the memory device and parity information, transmitting the bit string from the memory device to a physical input/output (PHY I/O) device couplable to the memory device via a channel, calculating a parity mismatch value based on a comparison between received memory parity information and a calculated PHY I/O parity information, determining a target parity mismatch value, comparing the calculated parity mismatch value and the determined target parity mismatch value, and regulating a voltage in response to the comparison between the calculated parity mismatch value and the target parity mismatch value to maintain an actual channel error rate within an optimal range.
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