Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.