发明授权
- 专利标题： Semiconductor pressure transducer
- 专利标题（中）： 半导体压力传感器
-
申请号： US883589申请日： 1978-03-06
-
公开(公告)号： US4173900A公开(公告)日： 1979-11-13
- 发明人: Masanori Tanabe , Satoshi Shimada , Motohisa Nishihara , Kazuji Yamada , Yasumasa Matsuda , Michitaka Shimazoe , Yoshitaka Matsuoka , Yukio Takahashi , Katsuya Katohgi , Mitsuo Ai
- 申请人： Masanori Tanabe , Satoshi Shimada , Motohisa Nishihara , Kazuji Yamada , Yasumasa Matsuda , Michitaka Shimazoe , Yoshitaka Matsuoka , Yukio Takahashi , Katsuya Katohgi , Mitsuo Ai
- 申请人地址： JPX
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX52/25045 19770307; JPX52/25046 19770307; JPX52/29678 19770317
- 主分类号： G01L9/00
- IPC分类号： G01L9/00 ; H01L29/84 ; G01L9/06
摘要：
A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.
公开/授权文献
- US5967266A Brake adjustment monitoring system 公开/授权日：1999-10-19
信息查询
