公开(公告)号：US4173900A

公开(公告)日：1979-11-13

申请号：US883589

申请日：1978-03-06

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： G01L9/0054 ,  H01L29/84

摘要： A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.

摘要翻译： 一种半导体压力传感器，包括盘形压力响应膜片; 一对具有压阻效应的径向应变计单元，其通过在所述隔膜的表面中沿径向注入杂质而形成; 以及具有压阻效应的一对切向应变计单元，其通过在隔膜的表面中沿切线注入杂质形成，其中从一对径向应变计单元到圆形隔膜的中心的距离更大 比从一对切向应变计单元到圆形隔膜中心的距离。

公开(公告)号：US4173148A

公开(公告)日：1979-11-06

申请号：US948778

申请日：1978-10-05

申请人： Kazuji Yamada ,  Hideo Sato ,  Tsutomu Okayama ,  Motohisa Nishihara ,  Yoshitaka Matsuoka ,  Katsuya Katohgi ,  Yasumasa Matsuda ,  Satoshi Shimada

发明人： Kazuji Yamada ,  Hideo Sato ,  Tsutomu Okayama ,  Motohisa Nishihara ,  Yoshitaka Matsuoka ,  Katsuya Katohgi ,  Yasumasa Matsuda ,  Satoshi Shimada

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01L1/22 ,  G01L9/00 ,  H01L23/58 ,  H01L29/84

CPC分类号： G01B7/18 ,  G01L1/2281 ,  G01L1/2293

摘要： A bridge circuit with four arms including semiconductor strain gauge elements has input terminals for coupling a DC power supply with a pair of diagonally opposite junctions of the bridge circuit per se and output terminals coupled with a pair of remaining diagonally opposite junctions. Initial zero-point temperature compensators each are connected in series and in parallel to each of semiconductor strain gauge elements on adjacent two arms of the bridge circuit. Temperature compensators for zero-point shift adjustment are each provided between the adjacent arms closer to each output terminal. A temperature compensator for span adjustment is provided between one of the input terminals and the DC power source. A constant current control unit for feeding a constant current to the bridge circuit is provided between the other input terminal and the DC power supply.

摘要翻译： 具有包括半导体应变计元件的四个臂的桥接电路具有用于将直流电源与桥接电路本身的一对斜对置接头连接的输入端子以及与一对剩余的对角线相对的接合部连接的输出端子。 初始零点温度补偿器各自与桥式电路的相邻两个臂上的每个半导体应变计元件串联并联。 用于零点移位调整的温度补偿器分别设置在靠近每个输出端子的相邻臂之间。 在一个输入端子和直流电源之间提供用于量程调节的温度补偿器。 在另一个输入端子和直流电源之间设置用于向桥式电路馈送恒定电流的恒定电流控制单元。

公开(公告)号：US4166384A

公开(公告)日：1979-09-04

申请号：US940077

申请日：1978-09-06

申请人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

发明人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

IPC分类号： G01L1/26 ,  C21D8/00 ,  C22C38/00 ,  C22C38/10 ,  G01D5/16 ,  G01L1/22 ,  G01L9/00 ,  G01L1/04 ,  G01L1/18

CPC分类号： G01L1/2293 ,  G01L9/0055

摘要： A semiconductor transducer comprising an improved strain-yielding body yielding a strain in response to the impartation of a force or displacement, and a semiconductor strain gauge bonded to the strain-yielding body. The improved strain-yielding body is made of an iron-nickel-cobalt alloy containing 28.2 to 31.0% by weight of nickel and 15.0 to 19.5% by weight of cobalt. This iron-nickel-cobalt alloy is initially heated up to a temperature above 600.degree. C. for the purpose of standard heat treatment for removing its internal strain. After the standard heat treatment, the iron-nickel-cobalt alloy is subjected to cold working at a working rate of more than and including 60%, and is then subjected to heat treatment at a temperature between 350.degree. C. and 600.degree. C. The heat-treated iron-nickel-cobalt alloy is shaped into the predetermined form of the strain-yielding body.

摘要翻译： 一种半导体换能器，其包括响应于施加力或位移而产生应变的改进的应变屈服体以及结合到应变屈服体的半导体应变仪。 改进的应变产生体由含有28.2至31.0重量％的镍和15.0至19.5重量％的钴的铁镍钴合金制成。 为了去除其内部应变，这种铁镍钴合金最初被加热到高于600℃的温度以进行标准热处理。 经过标准热处理后，铁镍钴合金以大于60％的加工速度进行冷加工，然后在350℃〜600℃的温度下进行热处理。 热处理的铁镍钴合金被成形为应变产生体的预定形式。

公开(公告)号：US4527428A

公开(公告)日：1985-07-09

申请号：US442665

申请日：1982-12-30

申请人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Shigeyuki Kobori ,  Motohisa Nishihara

发明人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Shigeyuki Kobori ,  Motohisa Nishihara

IPC分类号： G01L9/00 ,  G01L13/02 ,  G01L9/06

CPC分类号： G01L19/147 ,  G01L13/025 ,  G01L19/0038 ,  G01L19/0645 ,  G01L9/0054

摘要： A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.

摘要翻译： 一种半导体压力传感器，包括用于感测由相同材料的支撑构件支撑的压力的半导体材料的测量膜。 氧化层和薄玻璃层介于测量膜片和支撑件之间。

公开(公告)号：US4495820A

公开(公告)日：1985-01-29

申请号：US426084

申请日：1982-09-28

申请人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Motohisa Nishihara

发明人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Motohisa Nishihara

IPC分类号： G01L9/12 ,  G01L9/00 ,  H01G5/16 ,  H01L27/20 ,  H01G7/00 ,  H01L29/84

CPC分类号： H01L27/20 ,  G01L9/0073 ,  H01G5/16

摘要： A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.

摘要翻译： 公开了一种电容式压力传感器及其制造方法。 通过扩散处理在第一半导体衬底的主表面上形成放大器，并且其表面被绝缘膜覆盖。 电极沉积在放大器的表面上，并通过形成在绝缘膜上的通孔与放大器电连接。 为了形成光阑，第二半导体衬底的与电极相对配置以形成与面向电极的第二半导体衬底的表面相反的电容器的表面被部分蚀刻掉以形成凹陷。 使用玻璃层将第一和第二半导体衬底彼此阳极接合。

公开(公告)号：US4891831A

公开(公告)日：1990-01-02

申请号：US222615

申请日：1988-07-21

申请人： Akira Tanaka ,  Satoshi Shimada ,  Kazuji Yamada ,  Yusaku Nakagawa ,  Motohisa Nishihara ,  Tadahiko Miyoshi ,  Noboru Baba ,  Hiromi Kagohara ,  Ichiro Inamura

发明人： Akira Tanaka ,  Satoshi Shimada ,  Kazuji Yamada ,  Yusaku Nakagawa ,  Motohisa Nishihara ,  Tadahiko Miyoshi ,  Noboru Baba ,  Hiromi Kagohara ,  Ichiro Inamura

IPC分类号： H01J35/10

CPC分类号： H01J35/108 ,  H01J2235/084

摘要： A method for generating X-rays in an X-ray tube, comprises the steps of: rotating an X-ray target of a rotating anode, the X-ray target having a metal coated layer thereon; applying electron beams emitted from a cathode onto the metal coated layer of the X-ray target; and offsetting thermal deformation of the X-ray target due to the application of the electron beams by deformation of the X-ray target due to centrifugal force, thereby maintaining a position of the X-ray target in a direction of the application of the electron beams, at a room temperature of the X-ray target, thus generating the X-rays.

公开(公告)号：US4216477A

公开(公告)日：1980-08-05

申请号：US35235

申请日：1979-05-02

申请人： Yasumasa Matsuda ,  Satoshi Shimada ,  Kanji Kawakami ,  Motohisa Nishihara ,  Taisaku Kohzuma ,  Syoji Sagae ,  Tetsuo Doi ,  Takahiro Yamada

发明人： Yasumasa Matsuda ,  Satoshi Shimada ,  Kanji Kawakami ,  Motohisa Nishihara ,  Taisaku Kohzuma ,  Syoji Sagae ,  Tetsuo Doi ,  Takahiro Yamada

IPC分类号： B41J2/055 ,  B41J2/14 ,  B41J2/16 ,  G01D15/18

CPC分类号： B41J2/14233 ,  B41J2/055 ,  B41J2/162 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2002/14403

摘要： A nozzle head of an ink-jet printing apparatus according to the present invention comprises an ink reservoir for storing the ink supplied from an ink tank, a pump chamber provided between said ink reservoir and a nozzle for injecting ink particles, and a fluid diode provided between said ink reservoir and said pump chamber, which are all formed in a same substrate, wherein said pump chamber is caused to change its volume responsive to electric signals so that the ink stored therein is injected from said nozzle, and the ink is prevented from reversely flowing from said pump chamber to said ink reservoir when the volume of the pump chamber is changed, thereby to improve the frequency response of ink particles injected from the nozzle.

摘要翻译： 根据本发明的喷墨打印设备的喷嘴头包括用于存储从墨水盒供应的墨水的墨水储存器，设置在所述墨水储存器和用于注入墨水颗粒的喷嘴之间的泵室，以及设置有流体二极管 在所述墨水储存器和所述泵室之间，其都形成在相同的基板中，其中响应于电信号使所述泵室改变其体积，使得从所述喷嘴注入存储在其中的墨，并且防止墨水 当泵室的体积改变时，从所述泵室反向流动到所述储墨器，从而改善从喷嘴喷射的墨颗粒的频率响应。

公开(公告)号：US4319397A

公开(公告)日：1982-03-16

申请号：US165985

申请日：1980-07-07

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Akio Yasukawa ,  Hideyuki Nemoto ,  Motohisa Nishihara ,  Masatoshi Tsuchiya ,  Ko Soeno

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Akio Yasukawa ,  Hideyuki Nemoto ,  Motohisa Nishihara ,  Masatoshi Tsuchiya ,  Ko Soeno

IPC分类号： G01D5/16 ,  H01L29/84 ,  H01L21/58

CPC分类号： H01L29/84 ,  Y10T29/49103

摘要： A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.

摘要翻译： 在半导体单晶基板的一个主表面上形成应变计，同时在基板的另一个主表面上形成绝缘氧化膜。 在绝缘氧化膜的表面上形成包括共晶合金层的数层的金属接合层，将这样制作的结构安装在金属应变发生器上。 通过将该组件加热到接近共晶合金层的共晶点的温度，将半导体衬底和金属应变发生器连接在一起。

公开(公告)号：US4292618A

公开(公告)日：1981-09-29

申请号：US129195

申请日：1980-03-11

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Akio Yasukawa ,  Motohisa Nishihara ,  Takeo Nagata

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Akio Yasukawa ,  Motohisa Nishihara ,  Takeo Nagata

IPC分类号： G01B7/16 ,  G01L1/18 ,  H01L29/84 ,  G01L1/22

CPC分类号： H01L29/84 ,  G01L1/18

摘要： A semiconductor substrate has a major surface, another major surface on the opposite side of the first major surface, a strain gauge stripe formed in the central portion of the second major surface by diffusing an impurity therein, and electrodes connected to the strain gauge stripes. These strain gauge stripes are spaced from the peripheral edge of the second major surface by a distance greater than 1/3 of the length of the same major surface. The first major surface of the semiconductor substrate is bonded to an elastic metal load plate.

摘要翻译： 半导体衬底具有主表面，在第一主表面的相对侧上的另一个主表面，通过在其中扩散杂质而形成在第二主表面的中心部分中的应变计条，以及连接到应变计条纹的电极。 这些应变计条纹与第二主表面的周缘间隔大于同一主表面长度的1/3。 半导体基板的第一主表面与弹性金属负载板接合。

公开(公告)号：US4480478A

公开(公告)日：1984-11-06

申请号：US466027

申请日：1983-02-14

申请人： Hideo Sato ,  Motohisa Nishihara ,  Kazuji Yamada ,  Seikou Suzuki

发明人： Hideo Sato ,  Motohisa Nishihara ,  Kazuji Yamada ,  Seikou Suzuki

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01D3/028 ,  G01L9/00 ,  G01L9/06 ,  G01L19/04 ,  H01L29/84

CPC分类号： G01L9/065

摘要： Four semiconductor strain gauges constitute a bridge circuit. This bridge circuit and a sensitivity temperature compensation circuit are connected in series, and a constant voltage is applied to the series circuit. The sensitivity temperature compensation circuit varies a voltage across the bridge circuit, depending upon temperatures. The constant voltage is divided to produce a predetermined voltage. The predetermined voltage is selected to be equal to the voltage of one output side node of the bridge circuit at the time when the semiconductor strain gauges are unstrained and at a predetermined temperature. The point of this voltage and the output side node are connected through a resistor so as to perform zero-point temperature compensation.

摘要翻译： 四个半导体应变计构成桥接电路。 该桥式电路和灵敏度温度补偿电路串联连接，并向串联电路施加恒定电压。 灵敏度温度补偿电路根据温度改变桥接电路两端的电压。 将恒定电压分压以产生预定电压。 选择预定电压等于当半导体应变计未受限制并处于预定温度时桥接电路的一个输出侧节点的电压。 该电压和输出侧节点通过电阻连接，以进行零点温度补偿。